DATA SHEET SF801~SF807 SEMICONDUCTOR VOLTAGE RANGE 50 to 600 Volts 8.0 Amperes TO-220AC FEATURES Unit:inch(mm) • Low forward voltage drop .196(5.0) .163(4.16) • High current capability .419(10.66) MAX • High reliability • High surge current capability .054(1.39) .045(1.15) DIA .139(3.55) .MIN .269(6.85) .226(5.75) • Good for switching mode application .624(15.87) .548(13.93) • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS PIN1 2 3 .177(4.5) .MAX environment substance directive request .114(2.9) .098(2.5) .50(12.7) MAX MECHANICAL DATA .038(0.96) .019(.5) • Case: Molded plastic • Epoxy: UL 94V-0 rate flame retardant .100(2.54) .025(0.65) MAX • Lead: Lead solderable per MIL-STD-202, method 208 guranteed • Polarity: As Marked • Mounting position: Any • Weight: 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25°C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SF801 SF802 SF803 SF804 SF805 SF806 SF807 Maximum Recurrent Peak Reverse V oltage TYPE NUMBER 50 100 150 200 300 400 600 V Maximum RMS Voltage 35 70 105 140 210 320 420 V Maximum DC Blocking Voltage 50 100 150 200 300 400 600 V Maximum Average Forward Rectif ied Current .375"(9.5mm) Lead Length at Tc=100 °C Peak For ward Surge Current , 8.3 ms single half s ine-wave super imposed on rated load (J EDEC method) Maximum Instantaneous Forward Vol tage at 8.0A 8.0 A 125 A 0.95 Maxi mum DC Reverse Cur rent Tc=25 °C 1.30 1.70 10 at Rated DC B locking Vol tage Tc=100 °C 35 Typi cal Junction Capacitance (Note 2) Operating and Storage Temperature Range TJ, TSTG V µA 500 Maximum Reverse Recovery Time (Note 1) UNITS µA 50 nS 50 pF -55 +150 °C NOTES: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. http://www.yeashin.com 1 REV.02 20110725 RATINGS AND CHARACTERISTIC CURVES SF801~SF807 FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10Ω NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) 1Ω NONINDUCTIVE | | | | | | | | +0.5A 0 -0.25A AVERAGE FORWARD CURRENT,(A) 50Ω NONINDUCTIVE (+) OSCILLISCOPE (NOTE 1) -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 1cm 2. Rise Time= 10ns max., Source Impedance= 50 ohms. SET TIME BASE FOR 12 10 8 Single Phase 6 Half Wave 60Hz Resistive Or Inductive Load 4 2 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE,( C) 50 / 10ns / cm FIG.3-TYPICAL FORWARD FIG.4-TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 1000 REVERSE LEAKAGE CURRENT, (µA) 10 60 00V V-4 100 V-2 1.0 0V 00V 3.0 300 INSTANTANEOUS FORWARD CURRENT,(A) 50 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 .01 .4 .6 .8 1.0 1.2 1.4 1.6 100 10 Tc=25 C 1.0 0.1 1.8 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FORWARD VOLTAGE,(V) FIG.6-TYPICAL JUNCTION CAPACITANCE FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 125 JUNCTION CAPACITANCE,(pF) PEAK FORWARD SURGE CURRENT,(A) Tc=100 C 100 75 Tj=25 C 8.3ms Single Half Sine Wave 50 JEDEC method 25 150 125 100 75 50 25 0 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz http://www.yeashin.com .01 .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 2 REV.02 20110725 50 100