DATA SHEET UF3AB Thru UF3MB SEMICONDUCTOR SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE - 50 to 1000 Volts CURR ENT - 3.0 Amperes FEATURES SMB/DO-214AA • For surface mounted applications Unit:inch(mm) • Low profile package • Built-in strain relief .083(2.11) .075(1.91) • Easy pick and place .155(3.94) .130(3.30) • Ultrafast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .185(4.70) .160(4.06) • Glass passivated junction .012(.305) .006(.152) • High temperature soldering: 260 OC /10 seconds at terminals • High temperature soldering : 260OC / 10 seconds at terminals .096(2.44) .083(2.13) • Pb free product at available : 99% Sn above meet RoHS environment .012(.31) .006(.15) substance directive request .050(1.27) .030(0.76) MECHANICAL DATA .008(.203) .002(.051) .220(5.59) .200(5.08) • Case: JEDEC DO-214AB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, • Method 2026 • Polarity: Indicated by cathode band • Standard packaging: 16mm tape (EIA-481) Weight: 0.007 ounce, 0.21 gram SYMBOL UF3AB CHARACTERISTICS UF3KB UF3MB Maximum Recurrent Peak Reverse V oltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =75 °C UF3BB UF3DB UF3GB UF3JB Units I(AV) 3.0 A IFSM 100 A Peak Forward Surge Current 8.3ms single half sine- wave super imposed on rated load (JEDEC METHOD) Maxi mum f orward Voltage at 1.0A DC VF Maxi mum DC Rever se Cur rent @TJ =25 °C at Rated DC Block ing Voltage @TJ =100°C Maximum Reverse Recovery Time (Note 1) Typi cal Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3 ) Oper ati ng Temperature Range Storage Temperature Range 1.0 1.3 1.5 1.7 10 IR V uA 100 TRR 50 75 ns CJ 20 10 pF RθJL 30 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Thermal Resistance junction to Lead. http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES UF3AB Thru UF3MB AVERAGE FORWARD CURRENT, AMPERES trr +0.5A 0 -0.25 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. -1.0 SET TIME BASE FOR Source Impedance = 50 Ohms 1cm 3.0 2.5 2.0 1.5 SINGLE PHASE HALF 60Hz RESISTIVE OR LOAD P.C.B MOUNTED 0.5 0.315×0.315"(8.0×8.0mm) COPPER PAD 1.0 50 60 70 50 ns/cm 90 100 110 120 130 140 150 LEAD TEMPERATURE, °C Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING INSTANTANEOUS FORWARD CURRENT AMPERES Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES 80 100 TJ = 150 °C 10 TJ = 100°C 1 TJ = 25 °C 0.1 0.01 100 UF3AB ~ UF3DB UF3GB 10 UF3MB 1 TJ = 25 °C PULSE WIDTH = 300 µS 2% DUTY CYCLE 0.1 0.01 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 PERCENT OF PEAK REVERSE VOLTAGE VOLTS INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 160 TJ = 25 °C f = 1MHZ Vsig = 50mVp-p 140 CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES 200 100 50 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 120 100 UF3AB ~ UF3DB 80 60 UF3GB ~ UF3MB 40 10 1 10 50 20 .1 100 5 .5 1 2 5 10 20 50 100 200 500 1000 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE VOLTS Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT http://www.yeashin.com 2 Fig. 6-TYPICAL JUNCTION CAPACITANCE REV.02 20110725