SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C ID 115 mA Pulsed Drain Current I DM 800 mA Gate-Source Voltage V GS ± 40 V Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 1 Gate-Body Leakage Zero Gate Voltage Drain Current MAX. UNIT CONDITIONS. V I D=10µA, V GS=0V 2.5 V I D =250mA, V DS= V GS I GSS 10 nA V GS=± 20V, V DS=0V I DSS 1 500 µA µA V DS=48V, V GS=0V V DS=48V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25V, V GS=10V Static Drain-Source On-State Voltage (1) V DS(on) 500 3.75 375 V mV V GS=10V, I D=500mA V GS=5V, I D=50mA Static Drain-Source On-State Resistance (1) R DS(on) 7.5 7.5 Ω Ω V GS=10V, I D=500mA V GS=5V, I D=50mA Forward Transconductance (1)(2) g fs mS V DS=25V, I D=500mA 80 Input Capacitance (2) C iss 50 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Time (2)(3) t (on) 20 ns Turn-Off Time (2)(3) t (off) 20 ns V DS=25V, V GS=0V, f=1MHz V DD ≈30V, I D=200mA R g=25Ω, R L=150Ω (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3-2