Diodes SMD Type Silicon Epitaxial Planar Diode ZDV287 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High Capacitance Ratio : C2V/C25V=7.6(Typ.) Low Series Resistance : rs=1.9 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 Excellent C-V Characteristics, and Small Tracking Error. +0.05 0.1-0.02 Useful for Small Size Tuner. Absolute M axim um R atings T a = 25 P aram eter R everse V oltage S ym bol V alue U nit VR 30 V P eak R everse V oltage V RM Junction Tem perature Tj 125 T stg -55 to +125 S torage Tem perature R ange ) V Conditions Min Typ IR = 1 30 35 (R L =10K Electrical Characteristics Ta = 25 Parameter Symbol Reverse Voltage VR Reverse Current Capacitance V R = 28 V f = 1 MHz;V R = 2 V 4.2 5.7 C 25V f = 1 MHz;V R = 25 V 0.53 0.68 C 2V/C 25V rs Note : Available in matched group for capacitance to 6%. 0.06 (V R=2~25V) Marking Marking UP 10 7.3 V R = 5V, f = 470 MHz Unit V IR Capacitance Ratio C(Min.) Max C 2V Series Resistance C(Max.)-C(Min.) A 1.9 2.3 nA pF