ZOWIE SSCD110H

ZOWIE
Schottky Barrier Diode
(20V~100V / 1.0A)
SSCD102H THRU SSCD110H
OUTLINE DIMENSIONS
FEATURES
1.90 ± 0.2
3.40 ± 0.2
0.05
40
R0.
1.60
Typ.
* Low power loss, High efficiency
* High current capability, low VF
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.70 ± 0.2
APPLICATION
Switching mode power supply applications
Portable equipment battery applications
General rectification
DC / DC Converter
Telecommunication
0.70 ± 0.2
+ 0.2
0.96
- 0.1
*
*
*
*
*
Unit : mm
Case : 1206
* Halogen-free type
* Compliance to RoHS product
* Lead less chip form, no lead damage
Equivalent : SOD-123
MARKING
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.012 gram
Cathode mark
Voltage class
A .
Halogen-free type
Amps class
PACKING
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
o
Absolute Maximum Ratings (Ta = 25 C)
SSCD
ITEM
Symbol
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current
IFSM
Operating junction temperature Range
Conditions
102H
104H
106H
110H
20
40
60
100
V
1.0
8.3ms single half sine-wave
A
20
A
-55 to +125
Tj
TSTG
Storage temperature Range
Unit
-55 to +150
-55 to +150
o
C
o
C
o
Electrical characteristics (Ta = 25 C)
ITEM
Forward voltage (NOTE 1)
Repetitive peak reverse current (NOTE 1)
Junction capacitance
Thermal resistance
Symbol
VF
IRRM
Cj
Rth(JA)
Rth(JL)
Conditions
Type
Min.
Typ.
Max.
Unit
IF = 0.1A
IF = 0.5A
IF = 1.0A
SSCD102H
/
SSCD104H
-
0.32
0.40
0.46
0.50
V
IF = 0.1A
IF = 0.5A
IF = 1.0A
SSCD106H
-
0.35
0.48
0.62
0.70
V
IF = 0.1A
IF = 0.5A
IF = 1.0A
SSCD110H
-
0.45
0.66
0.76
0.85
V
VR = Max. VRRM , Ta = 25 oC
-
0.015
0.2
mA
VR = 4V, f = 1.0 MHz
-
110
-
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
-
88
28
pF
-
o
-
o
C/W
C/W
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
REV. 0
2007/12
ZOWIE
SSCD102H THRU SSCD110H
(20V~100V / 1.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
25
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
1.0
SSCD106H & SSCD110H
SSCD102H & SSCD104H
0.5
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
0
8.3ms Single Half Sine-Wave
(JEDEC Method)
20
15
10
5
0
0
50
70
90
110
130
150
1
170
10
o
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
IINSTANTANEOUS FORWARD CURRENT, (A)
100
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE, C
1.00
SSCD106H
SSCD110H
0.10
SSCD102H~104H
0.01
10
o
TJ =100 C
1.0
0.10
o
TJ =25 C
0.01
o
Ta=25 C
.001
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.8
FORWARD VOLTAGE, (V)
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE, pF
o
TJ = 25 C
f=1.0MHz
Vsig=50mVP-P
100
10
0
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 0
2007/12