ACE2301 P-Channel Enhancement Mode MOSFET Description The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features VDS=-20V RDS(ON),[email protected],[email protected]=100mΩ RDS(ON),[email protected],[email protected]=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -2.2 A IDM -8 A Pulsed Drain Current 1) Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature TJ Storage Temperature Range Junction to Ambient Thermal Resistance (PCB mounted) 1.25 PD TSTG 2) W 0.8 -55 to 150 O C -55 to 150 O C RθJA 140 O C/W Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2 2.1-in 2oz Cu PCB board. 3.Guaranteed by design; not subject to production testing. VER 1.3 1 ACE2301 P-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3 3 SOT-23-3 Description 1 1 Gate 2 Source 3 Drain 2 Ordering information ACE2301 XX + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics Parameter Symbol Conditions Min. -20 Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-2.8A 70.0 100.0 Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.0A 85.0 150.0 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA Zero Gate Voltage Drain Current IDSS Gate Body Leakage Forward Trans conductance -0.9 V VDS=-9.6V, VGS=0V -1 uA IGSS VGS=±8V, VDS=0V ±100 nA Gfs VDS=-5V, ID=-2.8A Dynamic Total Gate Charge Qg Gate-Source Charge Qgs -0.4 mΩ 6.5 S 3) VDS=-6V, ID=-2.8A VGS=-4.5V 5.8 0.85 10 nC VER 1.3 2 ACE2301 P-Channel Enhancement Mode MOSFET Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time Tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1.7 VDD=-6V,RL=6Ω ID=-1A, VGEN=-4.5V RG=6Ω VDS=-6V, VGS=0V F=1.0MHz 13 25 36 60 42 70 34 60 ns 415 223 pF 87 Source-Drain Diode Max. Diode Forward Current IS Diode Forward Voltage VSD IS=-1.6A,VGS=0V -1.6 A -1.2 V Note: Pulse test pulse width<=300us, duty cycle<=2%. VER 1.3 3 ACE2301 P-Channel Enhancement Mode MOSFET Packing Information SOT-23-3 VER 1.3 4 ACE2301 P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 5