ACE ACE2342

ACE2342
N-Channel Enhancement Mode MOSFET
Description
The ACE2342 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density , DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited for low voltage application such as
cellular phone and notebook computer power management and other battery powered circuits, and low
in-line power loss are needed in a very small outline surface mount package.
Features
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20V/5.0A,RDS(ON)= [email protected]=4.5V
20V/4.5A,RDS(ON)= [email protected]=2.5V
20V/4.0A,RDS(ON)= [email protected]=1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
4.0
3.0
A
Pulsed Drain Current
IDM
13
A
Continuous Source Current (Diode Conduction)
IS
1.0
A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25
0.8
W
Operating Junction Temperature
TJ
-55/150 ℃
Storage Temperature Range
TSTG
-55/150 ℃
Thermal Resistance-Junction to Ambient
RθJA
140
℃/W
VER 1.3
1
ACE2342
N-Channel Enhancement Mode MOSFET
Packaging Type
SOT-23-3
3
1
SOT-23-3 Description
1
Gate
2
Source
3
Drain
2
Ordering information
ACE2342 XX + H
Halogen - free
Pb - free
BM: SOT-23-3
VER 1.3
2
ACE2342
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
20
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
0.4
Gate Leakage Current
IGSS
VDS=0.V, VGS=±12V
±100
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
VDS=20V, VGS=0V TJ=55℃
10
On-State Drain Current
ID(ON)
Drain-Source On-Resistance
RDS(ON)
VDS≧5V, VGS=4.5V
1.0
6
V
nA
uA
A
VGS=4.5V, ID=5.0A
0.026 0.035
VGS=2.5V, ID=4.5A
0.029 0.040
VGS=1.8V, ID=4.0A
0.035 0.048
Forward Transconductance
Gfs
VDS=15V, ID=5.0A
30
Diode Forward Voltage
VSD
IS=-1.0A, VGS=0V
0.8
1.2
10
13
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
VDS=10V, VGS=4.5V,
ID≡5.0A
VDS=10V, VGS=0V,
f=1MHz
td(on)
tr
td(off)
tf
VDD=10V, RL=10Ω
ID≡1.0A, VGEN=4.5V
RG=6Ω
1.4
nC
2.1
600
120
pF
100
15
25
40
60
45
65
30
40
ns
VER 1.3
3
ACE2342
N-Channel Enhancement Mode MOSFET
Typical Characteristics
VER 1.3
4
ACE2342
N-Channel Enhancement Mode MOSFET
Typical Characteristics
VER 1.3
5
ACE2342
N-Channel Enhancement Mode MOSFET
Typical Characteristics
VER 1.3
6
ACE2342
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-3
VER 1.3
7
ACE2342
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
8