ACE3401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE3401B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Features VDS(V)=-30V, ID=-4A RDS(ON)<43mΩ @ VGS=-10V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V VGSS ±12 V Gate-Source Voltage O Drain Current (Continuous) TA=25 C ID O TA=70 C Drain Current (Pulse) Power Dissipation O TA=25 C -4 -3.5 IDM -30 PD 1.4 Operating and Storage Temperature Range TJ,TSTG -55 to 150 A A W O C Packaging Type SOT-23-3L D 3 SOT-23-3L Description 1 1 Gate 2 Source 3 Drain 2 G S Ordering information ACE3401B XX + H Halogen - free Pb - free BM : SOT-23-3L VER 1.2 1 ACE3401B P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. -30 -34 Max. Unit On/Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±12V, VDS=0V ±100 nA VGS=-10V, ID=-4.2A 43 VGS=-4.5V, ID=-4A 55 VGS=-2.5V, ID=-1A 110 Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Forward Transconductance gFS VDS=-5V, ID=-4A 15 Drain Forward Voltage VSD IS=-1A,VGS=0V -0.78 -1 6.4 8.3 1.8 2.3 1.4 1.8 11.4 22.72 2.3 4.6 34.9 69.8 3.5 7 Switching characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -1.0 -1.3 mΩ V S V (3) VDS=-15V, ID=-4A VGS=-4.5V VDD=-15V,RL=3.6Ω ID=-1A, VGEN=-10V RG=6Ω Dynamic characteristics -0.7 V nC ns (3) VDS=-15V, VGS=0V f=1.0MHz 826 90.7 pF 53.2 Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width ≤μ300s, Duty Cycle≤ 2.0% VER 1.2 2 ACE3401B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE3401B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE3401B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-23-3L Unit: mm VER 1.2 5 ACE3401B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6