ACE4613B Complementary Enhancement Mode Field Effect Transistor Description The ACE4613B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features N-channel VDS=30V ID=7A P-channel VDS=-30V ID=-6A Absolute Maximum Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 1) ID 7 -6 Pulse Drain Current (Note 2) IDM 30 -30 Total Power Dissipation (Note 1) PD 1 1 Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 A W O C Packaging Type SOP-8 VER 1.2 1 ACE4613B Complementary Enhancement Mode Field Effect Transistor Ordering information ACE4613B XX + H Halogen - free Pb - free FM : SOP-8 N-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. 30 33 Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA Forward Transconductance gFS VDS=5V, ID=5A 7.3 Diode Forward Voltage VSD IS=1A, VGS=0V 0.76 1 Turn-On Delay Time Td(on) 4.5 18 Turn-Off Delay Time td(off) VDS=15V, VGS=10V RGEN=3Ω, RL=2.3Ω 19 70 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS=10V, ID=7A 21 30 VGS=4.5V, ID=5A 34 40 1.5 3 1 mΩ V S V ns 407 VDS=15V, VGS=0V f=1MHz 113 pF 57 P-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. -30 -34 Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA V Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA Forward Transconductance gFS VDS=-5V, ID=-4A 12 S Diode Forward Voltage VSD IS=-1A, VGS=0V -0.77 V Turn-On Delay Time Td(on) 8 18 Turn-Off Delay Time td(off) VDS=-15V, VGS=-10V RGEN=3Ω, RL=2.5Ω 22 70 Input Capacitance Ciss VDS=-15V, VGS=0V 950 VGS=-10V, ID=-6A 27 35 VGS=-4.5V, ID=-5A 35 50 -1.5 -3 -1 mΩ V ns pF VER 1.2 2 ACE4613B Complementary Enhancement Mode Field Effect Transistor Output Capacitance Coss Reverse Transfer Capacitance Crss f=1MHz 137 118 Note: 1. 2 DUT is mounted on a 1in FR-4 board with 2oz. Copper in a still air environment at 25°C, the current rating is based on the DC（<10s） test conditions 2. Repetitive rating, pulse width limited by junction temperature. Typical Performance Characteristics VER 1.2 3 ACE4613B Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE4613B Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics Packing Information SOP-8 Units: mm VER 1.2 5 ACE4613B Complementary Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6