ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Description The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel VDS=30V ID=9A RDS(ON)<14mΩ(VGS=10V) RDS(ON)<22mΩ(VGS=4.5V) P-channel VDS=-30V ID=-8A RDS(ON)<20mΩ(VGS=-10V) RDS(ON)<35mΩ(VGS=-4.5V) Absolute Maximum Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage Gate-Source Voltage VDSS 30 -30 V VGSS ±20 ±20 V 9 -8 7.2 -6.4 40 -40 2 2 1.3 1.3 O Drain Current (Continuous) * AC TA=25 C O TA=70 C Drain Current (Pulse) * B ID IDM O Power Dissipation TA=25 C O TA=70 C PD Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 A W O C Packaging Type SOP-8 VER 1.2 1 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Ordering information ACE4614B XX + H Halogen - free Pb - free FM : SOP-8 N-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V 100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA Forward Transconductance gFS VDS=5V, ID=10A 20 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=1A, VGS=0V 0.74 VGS=10V, ID=10A 12 14 VGS=4.5V, ID=10A 16.5 22 2 3 1.4 IS mΩ V S 1.0 V 2.6 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=15V, ID=10A VGS=5V VDS=15V,RGEN=6Ω, VGS=10V RL=15Ω 7.65 9.95 2.82 3.67 2.49 3.24 13.92 27.84 2.64 5.28 31.4 62.8 3.28 6.56 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V, VGS=0V f=1MHz 886.01 151 pF 75.77 Note. 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤10s junction to ambient thermal resistance rating. VER 1.2 2 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor P-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V 100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Forward Transconductance gFS VDS=-5V, ID=-8A 21.7 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=-1A, VGS=0V -0.74 VGS=-10V, ID=-9.7A 17.1 20 VGS=-4.5V, ID=-7A 20.7 35 -1.2 -2 -1 IS mΩ V S -1.0 V -2.1 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=-15V, ID=-8A VGS=-10V VDS=-15V,RGEN=6Ω, VGS=-10V RL=15Ω 33.82 43.97 4.93 6.41 5.2 6.76 15.44 30.88 5.04 10.08 71.04 142.08 16.8 33.6 1973 2200 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V f=1MHz 491 231 pF 325 Note. 4. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 5. Repetitive rating, pulse width limited by junction temperature. 6. The current rating is based on the t≤10s junction to ambient thermal resistance rating. VER 1.2 5 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 6 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 7 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Packing Information SOP-8 Units: mm VER 1.2 8 ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 9