ACE ACE4710B

ACE4710B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Description
ACE4710B combines a P-Channel enhancement mode power MOSFET which is produced with high cell
density and DMOS trench technology and a low forward voltage schottky diode. This device particularly
suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB
consumption.
Features
MOSFET
 VDS(V)=-20V
 ID=-4A
 RDS(ON)@-4.5V, 58mΩ (Typ.)
 RDS(ON)@-2.5V, 76mΩ (Typ.)
 RDS(ON)@-1.8V, 97mΩ (Typ.)
Schottky
 VR 20V
 IF 2A
 [email protected]<430mV
Application




Li Battery Charging
High Side DC/DC Converter
High Side Driver for Brushless DC Motor
Power Management in Portable, Battery Powered Devices
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Continuous)
Continuous
Pulsed
Schottky Reverse Voltage
Schottky Continuous Forward Current
O
Power Dissipation Derating above TA=25 C
(Note 1)
Operating and Storage Temperature Range
ID
-4
-25
A
VR
20
V
IF
2
A
PD
1.5
W
TJ,TSTG -55 to 150
O
C
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
VER 1.2
1
ACE4710B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Packaging Type
DFN3*2
Ordering information
ACE4710B XX + H
Halogen - free
Pb - free
QN : DFN3*2
Electrical Characteristics
O
TA=25 C unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
P-channel Enhancement Mode MOSFET
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
-1
uA
Gate Leakage Current
IGSS
VGS=±8V, VDS=0V
±100
nA
Static Drain-Source On-Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
Turn-On Delay Time
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-20
V
VGS=-4.5V, ID=-4A
58
96
VGS=-2.5V, ID=-3A
76
118
VGS=-1.8V, ID=-2A
97
236
-0.7
-1.2
VDS=VGS, IDS=-250µA
-0.5
mΩ
V
20
VDD=-6V, RL=6Ω,
RG=6Ω, VGEN=-4.5V,
ID=-1A
18
ns
300
120
VDS=-6V, VGS=0V
f=1MHz
450
180
pF
90
VER 1.2
2
ACE4710B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Schottky Diode
Breakdown Voltage
VR
IR=300uA
20
V
Forward Voltage Drop
VF
IF=1A
0.37
0.43
V
Maximum reverse leakage current
IR
VR=20V
15
200
uA
Note : 2. Short duration test pulse used to minimize self-heating effect.
Typical Performance Characteristics
VER 1.2
3
ACE4710B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Typical Performance Characteristics
VER 1.2
4
ACE4710B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Typical Performance Characteristics
Packing Information
DFN3*2
Unit: mm
VER 1.2
5
ACE4710B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6