ACE4710B P-Channel Enhancement Mode MOSFET with Schottky Diode Description ACE4710B combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Features MOSFET VDS(V)=-20V ID=-4A RDS(ON)@-4.5V, 58mΩ (Typ.) RDS(ON)@-2.5V, 76mΩ (Typ.) RDS(ON)@-1.8V, 97mΩ (Typ.) Schottky VR 20V IF 2A VF@1A<430mV Application Li Battery Charging High Side DC/DC Converter High Side Driver for Brushless DC Motor Power Management in Portable, Battery Powered Devices Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current (Continuous) Continuous Pulsed Schottky Reverse Voltage Schottky Continuous Forward Current O Power Dissipation Derating above TA=25 C (Note 1) Operating and Storage Temperature Range ID -4 -25 A VR 20 V IF 2 A PD 1.5 W TJ,TSTG -55 to 150 O C Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package. VER 1.2 1 ACE4710B P-Channel Enhancement Mode MOSFET with Schottky Diode Packaging Type DFN3*2 Ordering information ACE4710B XX + H Halogen - free Pb - free QN : DFN3*2 Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit P-channel Enhancement Mode MOSFET Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±8V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -20 V VGS=-4.5V, ID=-4A 58 96 VGS=-2.5V, ID=-3A 76 118 VGS=-1.8V, ID=-2A 97 236 -0.7 -1.2 VDS=VGS, IDS=-250µA -0.5 mΩ V 20 VDD=-6V, RL=6Ω, RG=6Ω, VGEN=-4.5V, ID=-1A 18 ns 300 120 VDS=-6V, VGS=0V f=1MHz 450 180 pF 90 VER 1.2 2 ACE4710B P-Channel Enhancement Mode MOSFET with Schottky Diode Schottky Diode Breakdown Voltage VR IR=300uA 20 V Forward Voltage Drop VF IF=1A 0.37 0.43 V Maximum reverse leakage current IR VR=20V 15 200 uA Note : 2. Short duration test pulse used to minimize self-heating effect. Typical Performance Characteristics VER 1.2 3 ACE4710B P-Channel Enhancement Mode MOSFET with Schottky Diode Typical Performance Characteristics VER 1.2 4 ACE4710B P-Channel Enhancement Mode MOSFET with Schottky Diode Typical Performance Characteristics Packing Information DFN3*2 Unit: mm VER 1.2 5 ACE4710B P-Channel Enhancement Mode MOSFET with Schottky Diode Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6