ACE6428B N-Channel Enhancement Mode Field Effect Transistor Description The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS(V)=30V ID=43A (VGS=10V) RDS(ON)＜10mΩ (VGS=10V) RDS(ON)＜14.5mΩ (VGS=4.5V) 100% Delta Vsd Tested 100% Rg Tested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V VGSS ±20 V Gate-Source Voltage O TA=25 C Drain Current (Continuous) TA=100 C C Drain Current (Pulse) 43 ID O 27 IDM 80 O TA=25 C Drain Current (Continuous) Power Dissipation B Power Dissipation A O TA=70 C TA=100 C O TA=70 C A 8 30 PD O TA=25 OC 11 IDSM TA=25 OC A W 12 2 PDSM W 1.3 Operating and Storage Temperature Range TJ,TSTG -55 to 150 O C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case A AD t≦10s Steady-State Steady-State RθJA RθJC 21 25 ℃/W 50 60 ℃/W 3.5 4.2 ℃/W VER 1.2 1 ACE6428B N-Channel Enhancement Mode Field Effect Transistor Packaging Type DFN5*6-8L-EP Ordering information ACE6428B XX + H Halogen - free Pb - free PN : DFN5*6-8L-EP Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V 100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA Forward Transconductance gFS VDS=5V, ID=15A 25 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=2A, VGS=0V 0.71 VGS=10V, ID=20A 5.7 10 VGS=4.5V, ID=20A 7.9 14.5 1.9 2.5 1.2 IS mΩ V S 1.0 V 2 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=15V, ID=20A VGS=5V VDS=15V, VGS=10V RGEN=6Ω, RL=15Ω 16 20.8 5 6.5 3 3.9 17 34 5 10 50 100 10 20 VER 1.2 nC ns 2 ACE6428B N-Channel Enhancement Mode Field Effect Transistor Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V, VGS=0V f=1MHz 2470 325 pF 185 Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. TA=25°C Typical Performance Characteristics VER 1.2 3 ACE6428B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE6428B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 5 ACE6428B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 6 ACE6428B N-Channel Enhancement Mode Field Effect Transistor Packing Information DFN5*6-8L-EP VER 1.2 7 ACE6428B N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 8