ACE7401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS(V)=-30V ID=-29A (VGS=-10V) RDS(ON)＜13mΩ (VGS=-20V) RDS(ON)＜14mΩ (VGS=-10V) RDS(ON)＜17mΩ (VGS=-5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V VGSS ±25 V Gate-Source Voltage O TA=25 C Drain Current (Continuous) TA=100 OC Drain Current (Pulse) -60 TA=25 OC -9.7 29 PD O TA=100 C TA=25 OC 12 PDSM TA=70 OC Operating and Storage Temperature Range A -12 IDSM TA=75 C A -23 IDM O Power Dissipation B Power Dissipation C TA=25 OC Drain Current (Continuous) -29 ID W 3.1 2 TJ,TSTG -55 to 150 O C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol Typ Max Units A AD t≦10s Steady-State Steady-State RθJA RθJL 30 40 60 75 3.5 4.2 O C/W VER 1.2 1 ACE7401B P-Channel Enhancement Mode Field Effect Transistor Packaging Type DFN3*3-8L Ordering information ACE7401B XX + H Halogen - free Pb - free NN : DFN3*3-8L Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V 100 nA Static Drain-Source On-Resistance RDS(ON) -30 V VGS=-20V, ID=-10A 8.2 13 VGS=-10V, ID=-10A 9.2 14 VGS=-5V, ID=-7A 13.1 17 -1.8 -3 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250µA -1.5 Forward Transconductance gFS VDS=-5V, ID=-10A 26 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=-1A, VGS=0V -0.72 IS mΩ V S -1 V -4.2 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf VDS=-15V, ID=-12A VGS=-10V VDS=-15V, RL=1.25Ω, VGS=-10V, RGEN=3Ω 46.64 60.63 7.84 10.2 9.96 12.95 19.24 38.48 8.56 17.12 VER 1.2 nC ns 2 ACE7401B P-Channel Enhancement Mode Field Effect Transistor Turn-Off Delay Time td(off) 69.8 139.6 Turn-Off Fall Time tf 18.52 37.04 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V f=1MHz 2777.96 380.67 pF 217.7 Note: 1. The value of RqJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on RqJA t≤10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. 2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. 4. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 7. The maximum current rating is package limited. 8. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C Typical Performance Characteristics VER 1.2 3 ACE7401B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE7401B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 5 ACE7401B P-Channel Enhancement Mode Field Effect Transistor Packing Information DFN3*3-8L Unit: mm VER 1.2 6 ACE7401B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7