ADPOW APTGT100X120TE3

APTGT100X120TE3
3 Phase bridge
Trench IGBT® Power Module
VCES = 1200V
IC = 100A @ Tc = 80°C
Application
•
AC Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
•
17
16 15
Benefits
20
14
21
13
1 2
3 4
5 6
7 8
9 10
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Operating Area
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
11 12
Absolute maximum ratings
Symbol
VCES
•
•
•
•
•
•
•
TC = 25°C
Max ratings
1200
140
100
280
±20
480
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
July, 2003
18
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT100X120TE3 – Rev 0
19
•
•
•
•
APTGT100X120TE3
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
All ratings @ Tj = 25°C unless otherwise specified
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V, IC = 5mA
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
1.4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
1.7
2.0
5.0
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9Ω
Fall Time
Typ
Max
1200
Typ
7200
400
300
260
30
420
5
2.1
6.5
400
V
nA
Max
Unit
pF
ns
290
45
ns
520
90
12
Symbol Characteristic
VF
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
IF = 100A
VGE = 0V
IF = 100A
VR = 600V
di/dt =900A/µs
IF = 100A
VR = 600V
di/dt =900A/µs
Tj = 25°C
Tj = 125°C
Min
Typ
1.6
1.6
Tj = 25°C
5
Tj = 125°C
9
Tj = 25°C
10
Tj = 125°C
19
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/50 T25 = 298.16 K
RT =
Min
R25
exp B25 / 50
1 1
−
T25 T
V
70
Turn off Energy
Reverse diode ratings and characteristics
Unit
V
mA
Typ
5
3375
mJ
Max
2.1
Unit
V
mJ
µC
Max
Unit
kΩ
K
July, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
T: Thermistor temperature
RT: Thermistor value at T
APT website – http://www.advancedpower.com
2-3
APTGT100X120TE3 – Rev 0
Electrical Characteristics
APTGT100X120TE3
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
Min
IGBT
Diode
Typ
Max
0.26
0.48
2500
M5
-40
-40
-40
3
Unit
°C/W
V
150
125
125
4.5
300
°C
N.m
g
Package outline
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGT100X120TE3 – Rev 0
July, 2003
PIN 21