A3935 3-Phase Power MOSFET Controller for Automotive Applications Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A3935 is designed specifically for automotive applications that require high-power motors. Each provides six high-current gate drive outputs capable of driving a wide range of N-channel power MOSFETs. Drives wide range of N-channel MOSFETs in 3-phase bridges PFM boost converter for use with low-voltage battery supplies Internal LDO regulator for gate-driver supply Bootstrap circuits for high-side gate drivers Current monitor output Adjustable battery overvoltage detection Diagnostic outputs Motor lead short-to-battery, short-to-ground, and bridgeopen protection ▪ Undervoltage protection ▪ –40°C to 150°C TJ operation ▪ Thermal shutdown Package 36-pin QSOP (LQ): Approximate scale 1:1 A requirement of automotive systems is steady operation over a varying battery input range. The A3935 integrates a pulsefrequency modulated boost converter to create a constant supply voltage for driving the external MOSFETs. Bootstrap capacitors are utilized to provide the above battery supply voltage required for N-channel FETs. Direct control of each gate output is possible via six TTLcompatible inputs. A differential amplifier is integrated to allow accurate measurement of the current in the three-phase bridge. Diagnostic outputs can be continuously monitored to protect the driver from short-to-battery, short-to-supply, bridge-open, and battery under/overvoltage conditions. Additional protection features include dead-time, VDD undervoltage, and thermal shutdown. The A3935 is supplied in a 36-lead 0.8 mm pitch QSOP (package LQ, similar to SOICW). The lead (Pb) free variants (suffix –T ) have 100% matte tin leadframe plating. Typical Application 26301.102J A3935 3-Phase Power MOSFET Controller for Automotive Applications Selection Guide Part Number Pb-free A3935KLQTR1 A3935KLQTR-T2 1Variant – Yes Packing Terminals 1500 pieces/reel Package QSOP (similar to SOICW) surface mount 36 has been determined to be obsolete and is no longer in production. Status change: October 31, 2011. 2Variant is in production but has been determined to be NOT FOR NEW DESIGN. This classification indicates that sale of the variant is currently restricted to existing customer applications. The variant should not be purchased for new design applications because obsolescence in the near future is probable. Samples are no longer available. Status change: October 31, 2011. Absolute Maximum Ratings Parameter Symbol VBAT Load Supply Voltage VDRAIN VDRAIN pin VBOOST VBOOST pin VBOOSTD VBOOSTD pin VGHx Output Voltage Range Sense Circuit Voltage Logic Supply Voltage Logic Input/Output Conditions Rating Units –0.6 to 40 V –4 to 55 V VBAT pin GHA, GHB, and GHC pins VSx SA, SB, and SC pins –4 to 40 V VGLx GLA, GLB, and GLC pins –4 to 16 V –0.6 to 55 V –4 to 6.5 V –0.3 to 6.5 V VCx CA, CB, and CC pins VCSx CSN and CSP pins VLSS LSS pin VDD VDD pin VOVSET OVSET pin VBOOSTS BOOSTS pin VCSOUT CSOUT pin VDSTH VDSTH pin remaining logic pins ESD Rating – Human Body Model AEC-Q100-002; all pins 2.5 kV ESD Rating – Charged Device Model AEC-Q100-011; all pins 1050 V –40 to 135 °C 150 °C –55 to 150 °C Operating Temperature Junction Temperature* Storage Temperature Range TA TJ(max) Tstg Range K Fault conditions that produce excessive junction temperature will activate device thermal shutdown circuitry. These conditions can be tolerated, but should be avoided. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 A3935 3-Phase Power MOSFET Controller for Automotive Applications Functional Block Diagram BOOSTD VBAT VBOOST BOOSTS VDRAIN (KELVIN) Low Drop Out Linear Regulator OS (off) VREG VBAT VIGN Motor Supply Voltage REFi REFv Phase A OS (blank) External +5V VDD CA CBOOT AHI Turn ON Delay High-Side Driver To P hase C GHA ALO BHI BLO Control Logic SA CHI VREG CLO ENABLE Turn ON Delay Low-Side Driver GLA To P hase B FAULT OVFLT LSS VBAT Overvoltage VBAT Undervoltage UVFLT VBAT OVSET SA SB VREG Undervoltage Short to Ground Short to Battery Bridge Open cs RS VDD CSN VDD Undervoltage Thermal Shutdown GND SC VDSTH CSP VREG Drain-Source Fault Monitor LSS VDD VDRAIN CSOUT Dwg. FP-053 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 3 A3935 3-Phase Power MOSFET Controller for Automotive Applications ELECTRICAL CHARACTERISTICS at TJ = –40°C to 150°C, VBAT = 7 to 16 V, VDD = 4.75 to 5.25 V, ENABLE = 22.5 kHz, 50% duty cycle, two phases active;unless otherwise noted Characteristics Power Supply VDD Supply Current VBAT Supply Current Battery Voltage Operating Range Symbol Bootstrap Diode Forward Voltage VDBOOT Bootstrap Diode Resistance rDBOOT Bootstrap Diode Current Limit2 Bootstrap Quiescent Current Bootstrap Refresh Time VREG Output Voltage3 VREG Dropout Voltage4 Gate Drive Average Supply Current VREG Input Bias Current Boost Supply VBOOST Output Voltage Limit VBOOST Output Voltage Limit Hysteresis Boost Switch On Resistance Boost Switch Maximum Current Boost Current Limit Threshold Voltage Off Time Blanking Time Control Logic IDD IBAT VBAT IDM ICx trefresh VREG VREGDO IREG IREGbias Conditions All logic inputs = 0 V All logic inputs = 0 V IDBOOT = –ICx = 10 mA, VDBOOT = VREG – VCx IDBOOT = –ICx = 100 mA rDBOOT(100 mA) = (VDBOOT(150 mA) – VDBOOT(50 mA)) / 100 mA 3 V < VREG – VCx < 12 V VCx = 40 V, GHx = ON VSx = low, to guarantee ΔV = +0.5 V refresh of 0.47 μF Bootstrap Capacitor, CBOOT, to VCx – VSx = +10 V VBAT = 7 to 40 V, VBOOST from Boost Regulator VREGDO = VBOOST – VREG, IREG = 40 mA No external dc load at VREG, CREG = 10 μF Current into VBOOST, ENABLE = 0 VBOOSTM VBAT = 7 V ∆VBOOSTM rDS(on) IBOOSTD < 300 mA IBOOSTSW VBI(th) Increasing VBOOSTS toff tblank Minimum high level input for logic 1 Maximum low level input for logic 0 VI = VDD VI = 0.8 V Logic Input Hysteresis VI(1) VI(0) II(1) II(0) VIhys Logic Output High Voltage VO(H) IO(H) = –800 μA Logic Input Voltage Logic Input Current Logic Output Low Voltage VO(L) IO(L) = 1.6 mA Gate Drives, GHx (internal source, or upper, switch stages)5 GHx: IxU = –10 mA, VSx = 0 Output High Voltage VDSL(H) GLx: IxU = –10 mA, VLSS = 0 Source Current (pulsed) Source On Resistance IxU rSDU(on) VSDU = 10 V, TJ = 25°C VSDU = 10 V, TJ = 135°C IxU = –150 mA, TJ = 25°C IxU = –150 mA, TJ = 135°C Min. Typ1. Max. Units – – 7.0 0.8 1.5 – – – – – 7.0 3.0 40 2.0 2.3 mA mA V V V 2.5 – 7.5 Ω –150 10 – – –1150 30 mA μA – – 2.0 μs 12.7 – – – – 0.9 – – 14 – 40 4.0 V V mA mA 14.9 35 – – 0.45 3.0 100 – – 1.4 – – – – 16.3 180 3.3 300 0.55 8.0 220 V mV Ω mA V μs ns 2.0 – – 50 100 VDD – 0.8 – – – – – – – 0.8 500 – 300 V V μA μA mV – – V – 0.4 V – VREG V – VREG V 800 – – – – – 10 15 mA mA Ω Ω VREG – 2.26 VREG – 0.26 – 400 4.0 7.0 Continued on the next page… Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 4 A3935 3-Phase Power MOSFET Controller for Automotive Applications ELECTRICAL CHARACTERISTICS (continued) at TJ = –40°C to 150°C, VBAT = 7 to 16 V, VDD = 4.75 to 5.25 V, ENABLE = 22.5 kHz, 50% duty cycle, two phases active;unless otherwise noted Min. Typ1. Max. Units VDSL = 10 V, TJ = 25°C VDSL = 10 V, TJ = 135°C IxL = 150 mA, TJ = 25°C IxL = 150 mA, TJ = 135°C – 550 1.8 3.0 850 – – – – – 6.0 7.5 mA mA Ω Ω tpd tsk(o) tdead Logic input to unloaded GHx, GLx Grouped by edge, phase–to–phase Between GHx, GLx transitions of same phase – – 75 – – – 150 50 180 ns ns ns Ibias IIO CSP = CSN = 0 V CSP = CSN = 0 V CSP with respect to GND CSN with respect to GND VID = CSP – CSN, –1.3V < CSP,N < 4V CSP = CSN = 0 V CSP = CSN = 0 V CSP = CSN VID = 40 to 200 mV VID = 0 to 40 mV, VO = (19.2 × VID) + VO + Ev CSP = CSN = 200 mV VCSOUT = 2.0 V –180 – – – – 77 – –1.5 18.6 – 28 – – – 80 4.0 – 250 100 – 19.2 – – 8.0 μA μA kΩ kΩ mV mV μV/°C V V/V mV dB Ω ICSOUT = –100 μA at top rail, 100 μA at bottom rail 0.075 – VCSOUT = 2.5 V VCSOUT = 2.5 V CSP = CSN = GND, frequency = 0 to 1 MHz CSP = CSN = GND, frequency = 0 to 300 kHz 10 mV input Vcm = 250 mV(pp), frequency = 0 to 800 kHz 200 mV step input, measured at 10/90% points 20 –1.0 20 45 – 26 10 – – – – 1.6 – – –360 ±35 – – ±200 450 – 4.0 19.8 ±25 – – VDD – 0.25 – – – – – – – 3.8 100 0 0 –1.0 19.4 19.4 9.0 – – – – – – 22.4 – 4.3 300 VDD 2.5 1.0 40 25.4 15 V mV V V μA V V % Characteristics Symbol Gate Drives, GLx (internal sink or lower switch stages)6 Sink Current (pulsed) Sink On Resistance Gate Drives, GHx, GLx (General)5,6 Propagation Delay, Logic only Output Skew Time Dead Time (shoot–through prevention) Sense Amplifier Input Bias Current2 Input Offset Current2 Input Resistance Diff. Input Operating Voltage Output Offset Voltage Output Offset Voltage Drift Input Common Mode Operating Range Voltage Gain Low Output Voltage Error DC Common Mode Attenuation Output Resistance Output Dynamic Range Output Current, Sink Output Current, Source2 VDD Supply Ripple Rejection VREG Supply Ripple Rejection Small Signal 3 dB Bandwidth AC Common Mode Attenuation Output Slew Rate (positive or negative) Fault Logic VDD Undervoltage VDD Undervoltage Hysteresis OVSET Operating Voltage Range OVSET Calibrated Voltage Range OVSET Input Current Range2 VBAT Overvoltage Range VBAT Overvoltage Hysteresis IxL rDSL(on) ri VID VOO ΔVOO VIC AV EV A VC rO VCSOUT Isink Isource PSRRVDD PSRRVREG BWf3db A VC(ac) SR Conditions VDD(uv) Decreasing VDD ∆VDD(uv) VDD(recovery) – VDD(uv) VSET(ov) VSET(ov)cal ISET(ov) 0 V < VSET(ov) < 2.5 V VBAT(ov) Increasing VBAT, VSET(ov) = 0 V ∆VBAT(ov) Percent of VBAT(ov) value set by VSET(ov) V mA mA dB dB MHz dB V/μs Continued on the next page… Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 5 A3935 3-Phase Power MOSFET Controller for Automotive Applications ELECTRICAL CHARACTERISTICS (continued) at TJ = –40°C to 150°C, VBAT = 7 to 16 V, VDD = 4.75 to 5.25 V, ENABLE = 22.5 kHz, 50% duty cycle, two phases active;unless otherwise noted Characteristics Symbol VBAT Overvoltage Gain Constant KBAT(ov) VBAT Undervoltage VBAT Undervoltage Hysteresis VREG Undervoltage VDSTH Input Range VDSTH Input Current VBAT(uv) VBAT(uv) VREG(uv) VDSTH IDSTH Conditions VBAT(ov) = (KBAT(ov) x VSET(ov)) + VBAT(ov)(0); VBAT(ov)(0) at VSET(ov) = 0 Decreasing VBAT Percent of VBAT(uv) Decreasing VREG VDSTH > 0.8 V With a high–side driver on, as VSX decreases, VDRAIN – VSx > VSTG causes a fault With a low–side driver on, as VSX increases, VSx – VLSS > VSTB causes a fault Min. Typ1. Max. Units – 12 – V/V 5.0 8.0 9.9 0.5 40 5.25 – – – – 5.5 12 11.1 3.0 100 V % V V μA VDSTH + V 0.2 VDSTH + Short–to–Battery Threshold VSTB(th) – V 0.2 VBAT + VDRAIN-Open Bridge Operating Range VDRAIN 7 V < VBAT < 40 V V –0.3 – 2.0 VDRAIN-Open Bridge Current IVDRAIN 7 V < VBAT < 40 V 0 – 1.0 mA VDRAIN /Open Bridge Threshold Voltage VBDGO(th) If VDRAIN < VBDGOTH then a bridge fault occurs 1.0 – 3.0 V 160 170 180 °C Thermal Shut Down Temperature TJ Thermal Shutdown Hysteresis ∆TJ 7.0 10 13 °C 1Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary for individual units, within the specified maximum and minimum limits. 2Negative current is defined as coming out of (sourcing) the specified device terminal. 3For V BOOSTM < VBOOST < 40 V power dissipation in the VREG LDO increases. Observe TJ < 150°C limit. 4With V BOOST decreasing, dropout voltage measured at VREG = VREG(ref) – 200 mV where VREG(ref) = VREG at VBOOST = 16 V. 5For GHx: V SDU = VCx – VGHx, VDSL = VGHx – VSx, VDSL(H) = VCx – VSDU – VSx. 6For GLx: V SDU = VREG – VGLx, VDSL = VGLx – VLSS, VDSL(H) = VREG – VSDU – VLSS. Short–to–Ground Threshold VSTG(th) VDSTH – 0.3 VDSTH – 0.3 – Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 6 A3935 3-Phase Power MOSFET Controller for Automotive Applications Thermal Characteristics Characteristic Package Thermal Resistance Symbol RθJA Test Conditions* Value Units On 4-layer PCB, based on JEDEC standard 44 ºC/W *Additional thermal information available on Allegro Web site. ALLOWABLE PACKAGE POWER DISSIPATION IN WATTS Power Dissipation versus Ambient Temperature 5.0 4.0 3.0 2.0 R θJA =4 4°C /W * 1.0 0 25 50 75 100 125 AMBIENT TEMPERATURE IN °C 150 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 7 A3935 3-Phase Power MOSFET Controller for Automotive Applications Terminal Descriptions AHI, BHI, and CHI. Direct control of high-side gate outputs GHA, GHB, and GHC. Logic 1 drives the gate on. Logic 0 pulls the gate down, turning off the external power MOSFET. Internally pulled down when the terminal is open. ALO, BLO, and CLO. Direct control of low-side gate outputs GHA, GHB, and GHC. Logic 1 drives the gate on. Logic 0 pulls the gate down, turning off the external power MOSFET. Internally pulled down when the terminal is open. BOOSTD. Boost converter switch drain connection. BOOSTS. Boost converter switch source connection. CA, CB, and CC. High-side connection for the bootstrap capacitors, CBOOTx, positive supply for high-side gate drive. The bootstrap capacitor is charged to VREG when the output Sx terminal is low. When the output swings high, the voltage on this terminal rises with the output to provide the boosted gate voltage needed for N-channel power MOSFETs. CSN. Input for current-sense differential amplifier, on the inverting, negative side. Kelvin connection for the ground side of the current-sense resistor, RSENSE. CSOUT. Amplifier output voltage proportional to the current sensed across an external low-value resistor placed in the ground side of the power MOSFET bridge. CSP. Input for current-sense differential amplifier, on the noninverting, positive side. Connected to the positive side of the sense resistor, RSENSE. ENABLE. Logic 0 disables the gate control signals and switches off all the gate drivers (low) causing a coast condition. Can be used in conjunction with the gate inputs to PWM (pulse wave modulate) the load current. Internally pulled down when the terminal is open. ¯F ¯¯ A¯¯ U¯¯ L ¯¯ T ¯ . Diagnostic logic output signal. When low, indicates that one or more fault conditions have occurred. GHA, GHB, and GHC. High-side gate drive outputs for N-channel MOSFET drivers. External series gate resistors can control the slew rate seen at the power driver gate, thereby controlling the di/dt and dv/dt of Sx outputs. GLA, GLB, and GLC. Low-side gate drive outputs for external, N-channel MOSFET drivers. External series gate resistors can control slew rate. GND. Ground, or negative, side of VDD and VBAT supplies. LSS. Low-side gate driver return. Connects to the common sources on the low sides of the power MOSFET bridge. OVFLT. Logic 1 indicates that the VBAT level exceeded the VBAT overvoltage trip point set by the OVSET level. It will recover after exceeding a hysteresis below that maximum value. Normally, it has a high-impedance state. If OVFLT and UVFLT are both in high-impedance state; then, at least, a thermal shutdown or VDD undervoltage has occurred. OVSET. A positive dc level that controls the VBAT overvoltage trip point. Usually, set by a precision resistor divider network between VDD and GND, but can be held grounded for a preset value. When this terminal is open, it sets an unspecified but high overvoltage trip point. SA, SB, and SC. Directly connected to the motor terminals, these terminals sense the voltages switched across the load and are connected to the negative side of the bootstrap capacitors, CBOOTx. Also, are the negative supply connection for the floating high-side drivers. UVFLT. Logic 1 indicates that the VBAT level is below its minimum value. It will recover after exceeding a hysteresis above that minimum value. Has a high-impedance state. If UVFLT and OVFLT are both in high-impedance state; then, at least, a thermal shutdown or VDD undervoltage has occurred. VBAT. Battery voltage. Positive input. usually connected to the motor voltage supply. VBOOST. Boost converter output, 16 V nominal, is also the input to the regulator for VREG. Has internal boost-current and boost-voltage control loops. In high-voltage systems is approximately one diode drop below VBAT. VDD. Logic supply, +5 V nominal. VDRAIN. Kelvin connection for drain-to-source voltage monitor. Connected to the high-side drains of the MOSFET bridge. High impedance when this terminal is open, and registers as a short-toground fault on all motor phases. VDSTH. A positive dc level that sets the drain-to-source monitor threshold voltage. Internally pulled down when this terminal is open. VREG. High-side gate driver supply, 13.5 V nominal. Has lowvoltage dropout (LDO) feature. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 8 A3935 3-Phase Power MOSFET Controller for Automotive Applications Functional Description Motor Lead Protection. A fault detection circuit monitors the voltage across the drain-to-source of the external MOSFETs. A fault is asserted low on the output terminal, F ¯ ¯A¯¯U¯¯L ¯¯T ¯, if the drain-to-source voltage of any MOSFET that is instructed to turn on is greater than the voltage applied to the VDSTH input terminal. When a high-side switch is turned on, the voltage from VDRAIN to the appropriate motor phase output, VSX, is examined. If the motor lead is shorted to ground before the high-side is turned on, the measured voltage will exceed the threshold and the F ¯ ¯A¯¯U¯¯L ¯¯T ¯ terminal will go low. Similarly, when a low-side MOSFET is turned on, the differential voltage between the motor phase (drain) and the LSS terminal (source) is monitored. VDSTH is set by a resistor divider to VDD. The VDRAIN is intended to be a Kelvin connection for the high-side, drain-to-source monitor circuit. Voltage drops across the power bus are eliminated by connecting an isolated PCB trace from the VDRAIN terminal to the drain of the MOSFET bridge. This allows improved accuracy in setting the VDSTH threshold voltage. The low-side, drain-to-source monitor uses the LSS terminal, rather than VDRAIN, for comparison with VDSTH. The A3935 just reports these motor faults. Fault Outputs. Transient faults on any of the fault outputs are to be expected during switching, and will not disable the gate drive outputs. External circuitry or controller logic must determine if the faults represent a hazardous condition. ¯F¯¯A¯¯U¯¯L¯¯T¯. This terminal will go active low when any of the following conditions occur: • VBAT overvoltage • VBAT undervoltage • Motor lead short-to-supply or short-to-battery • Bridge (or VDRAIN) open • VREG undervoltage • VDD undervoltage • Motor lead short-to-ground • Thermal shut down OVFLT. Asserts high when a VBAT overvoltage fault occurs and resets low after a recovery hysteresis. It has a high-impedance state when a thermal shutdown or VDD undervoltage occurs. The voltage at the OVSET terminal, VOVSET, controls the VBAT overvoltage set point VBAT(ov), as follows: VBAT(ov) = (ABAT(ov) × VSET(ov)) + VBAT(ov)(0), where ABAT(ov) is the gain (12) and VBAT(ov)(0) is the value of VBAT(ov) when VSET(ov) = 0 (VBAT(ov) ≈ 22.4). For the above formula to be valid, all variables must be in range and below the maximum operating specification. UVFLT. Asserts high when a VBAT undervoltage fault occurs and resets low after exceeding a recovery hysteresis. It has a highimpedance state when a thermal shut down or VDD undervoltage occurs. OVFLT and UVFLT are mutually exclusive by definition. Current Sensing. A current-sense amplifier is provided to allow system monitoring of the load current. The differential amplifier inputs are intended to be Kelvin-connected across a low-value sense resistor or current shunt. The output voltage is represented by: VCSOUT = ( ILOAD ×AV × RSENSE) + VOS where VOS is the output voltage calibrated at zero load current and A V is the differential amplifier gain of about 19.2. If either the CSP or CSN pin is open, the CSOUT pin will go to its maximum positive level. Shut Down. If a fault occurs because of excessive junction temperature or undervoltage on VDD or VBAT, all gate driver outputs are driven low until the fault condition is removed. In addition, the boost supply switch and VREG are turned off until those undervoltages and junction temperatures recover. Boost Supply. VBOOST is controlled by an inner currentcontrol loop, and by an outer voltage-feedback loop. The current-control loop turns off the boost switch for 5 μs whenever the voltage across the boost current-sense resistor exceeds 500 mV. A diode reverse-recovery current flows through the sense resistor whenever the boost switch turns on, which could result in turning off the switch again if not for the blanking-time circuit. Adjustment of this external sense resistor determines the maximum current in the inductor. Whenever VBOOST exceeds the predefined threshold, 16 V nominal the boost switch is inhibited. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 9 A3935 3-Phase Power MOSFET Controller for Automotive Applications Input Logic Table Input Output Mode of Operation ENABLE xLO xHI GLx GHx 0 Don’t Care Don’t Care 0 0 All gate drive outputs low 1 0 0 0 0 Both gate drive outputs low 1 0 1 0 1 High-side on 1 1 0 1 0 Low-side on 1 1 1 0 0 XOR circuitry prevents shoot-through Fault Output Regulator State Driver Output UVFLT Boost VREG GHx GLx 0 ON ON a a a Fault Response Table Operating Conditions Fault Mode No Fault ENABLE Don’t Care ¯ F ¯¯ A¯¯ U¯¯ L ¯¯ T ¯ OVFLT 1 0 Short-to-Battery 1b 0 0 0 ON ON a Short-to-Ground 1c 0 0 0 ON ON a a Bridge (VDRAIN) Fault 1d 0 0 0 ON ON a a VREG Undervoltage Don’t Care 0 0 0 ON ON a a VBAT Overvoltage Don’t Care 0 1 0 OFFe ON a a VBAT Undervoltagef Don’t Care 0 0 1 OFF OFF 0 0 VDD Undervoltagef Don’t Care 0 High Z High Z OFF OFF 0 0 Thermal Shut Downf Don’t Care 0 High Z High Z OFF OFF 0 0 aDetermined by input states: xLO, xHI, and ENABLE. See Input Logic table. bShort-to-battery can only be detected when the corresponding GLx = 1. This fault is not detected when ENABLE = 0. cShort-to-ground can only be detected when the corresponding GHx = 1. This fault is not detected when ENABLE = 0. dBridge fault appears as a short-to-ground fault on all motor phases. This fault is not detected when ENABLE = 0. eOff only because V BOOST ≈ VBAT , which is above the voltage threshold of the Boost regulator voltage control loop. fThese faults are not only reported, but also action is taken by the internal logic to protect the A3935 and the system. 10 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com A3935 3-Phase Power MOSFET Controller for Automotive Applications Pin-out Diagram CSP 1 36 CSN VDSTH 2 35 VDD LSS 3 34 CSOUT1 GLC 4 33 OVSET SC 5 32 ENABLE GHC 6 31 CHI CC 7 30 CLO GLB 8 29 BLO SB 9 28 BHI GHB 10 27 AHI CB 26 ALO 11 GLA 12 25 FAULT SA 13 24 OVFLT GHA 14 23 UVFLT CA 15 22 VBAT VREG 16 21 GND VDRAIN 17 20 BOOSTD VBOOST 18 19 BOOSTS Terminal List Number Name 1 CSP 2 VDSTH 3 Function Number Name Function Current-sense input, positive-side 19 BOOSTS DC input, drain-to-source monitor threshold voltage 20 BOOSTD LSS Gate-drive source return, low-side 21 GND 4 GLC Gate-drive C output, low-side 22 VBAT Battery supply, positive 5 SC Load phase C input 23 UVFLT VBAT undervoltage fault output 6 GHC Gate-drive C output, high-side 24 OVFLT VBAT overvoltage fault output 7 CC Bootstrap capacitor C 25 ¯F ¯¯ A ¯¯ U¯¯ L¯¯ T ¯ Active-low fault output, primary 8 GLB Gate-drive B output, low-side 26 ALO Gate control input A, low-side 9 SB Load phase B input 27 AHI Gate control input A, high-side 10 GHB Gate-drive B output, high-side 28 BHI Gate control input B, high-side 11 CB Bootstrap capacitor B 29 BLO Gate control input B, low-side 12 GLA Gate-drive A output, low-side 30 CLO Gate control input C, low-side 13 SA Load phase A input 31 CHI 14 GHA Gate-drive A output, high-side 32 ENABLE Bootstrap capacitor A 33 OVSET DC input, overvoltage threshold setting for VBAT Gate drive supply, positive 34 CSOUT Current-sense amplifier output 15 CA 16 VREG Boost switch, source Boost switch, drain Ground, dc supply returns, negative Gate control input C, high-side Gate output enable 17 VDRAIN Kelvin connection to MOSFET high-side drains 35 VDD Logic supply, nominally +5 V 18 VBOOST Boost supply output 36 CSN Current-sense input, negative-side 11 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com A3935 3-Phase Power MOSFET Controller for Automotive Applications Package LQ, 36-pin QSOP 15.30 ±0.10 0.80 0.60 4° ±4 36 +0.05 0.28 –0.04 2.15 7.50 ±0.10 B 9.50 10.31 ±0.30 A +0.44 0.84 –0.43 1 2 (0.36) 36X SEATING PLANE 0.10 A +0.12 0.40 –0.11 (0.80) 2.64 MAX 0.20 ±0.10 C SEATING PLANE GAGE PLANE A Terminal #1 mark area For Reference Only (QSOP, nonJEDEC standard) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown B Reference land pattern layout (reference IPC7351 SOP80P1033X264-36M); adjust as necessary to meet application process requirements and PCB layout tolerances. All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances 12 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com A3935 3-Phase Power MOSFET Controller for Automotive Applications Revision History Revision Revision Date Rev. J October 31, 2011 Description of Revision Update product availability Copyright ©2005-2011, Allegro MicroSystems, Inc. Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro’s products are not to be used in life support devices or systems, if a failure of an Allegro product can reasonably be expected to cause the failure of that life support device or system, or to affect the safety or effectiveness of that device or system. The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. For the latest version of this document, visit our website: www.allegromicro.com 13 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com