ALPHA-MICRO AMG

AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
1. Functional Description of the AMG-DF102
The AMG-DF102 is a high voltage MOSFET and IGBT driver with two dependent high and low
side output channels for Full-Bridge applications. The IC AMG-DF102 has an additional driver
in high side configuration to drive a buck converter.
CMOS and TTL compatible input levels. Logic inputs are CMOS Schmitt-triggered with pulldown resistors.
The floating high side outputs are designed for bootstrap operation so to drive an N-channel
power MOSFET or IGBT in high side configuration.
During start up the input ENQ need to be tied to VCC to pull the driver outputs low. With ENQ
being pulled low, the device is enabled. This protects against unwanted behaviour of the
power stage during the start up process, when the supply voltage is rising.
2. Features









Logic supply range from 12 to 15V
CMOS Schmitt-triggered input logic with pull-down
Internally inserted dead time
High side output follows corresponding input
Floating high side outputs designed for bootstrap operation
Enable input turns off all outputs
Under-voltage detection for all outputs
Temperature range –25°C to 85°C
Package SOP24
3. Application
The AMG-DF102 is suitable for High Voltage Power Supplies, Motor Controls, Inverters,
Battery Chargers and Lamp Ballasts.
AMG-DF102
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30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
3.1. Example Application Drawing
400V (PFC)
VS
VBH
INB
IH
HOH
IN1
IN1
VSH
IN2
IN2
VB1
H01
VS1
LOAD
L01
VB2
H02
VS2
GND
GND
L02
Figure 1: Please insert a clear example application drawing here.
3.2. Application Notes
Transistors, bootstrap diodes and caps physically need to be placed as close as possible to
the IC. Via's and 90º trace curves should be avoided. For best performance the distance
between the transistors, bootstrap diodes and caps - and the IC should be kept under 1cm,
traces to the transistors should be straight and min. 1mm wide, if needed only 45º trace
curves. Bootstrap diodes need to be fast switching diodes. Bootstrap capacitors need to have
low ESR. Traces to/from the bootstrap diodes and caps should be min. 1mm wide, as short as
possible and only 45º curves used.
Additional information may be found in Application Note: AMG-AN-DF102
AMG-DF102
Revision: AB
30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
Table of Contents
1.Functional Description of the AMG-DF102............................................................................. 1
2.Features................................................................................................................................. 1
3.Application............................................................................................................................. 1
3.1.Example Application Drawing................................................................................................... 2
3.2.Application Notes..................................................................................................................... 2
4.Block Diagram....................................................................................................................... 4
5.Block Descriptions................................................................................................................. 5
5.1.Voltage Divider VCC................................................................................................................. 5
5.2.Input Enable............................................................................................................................. 5
5.3.Trigger input ............................................................................................................................ 5
5.4.UV Detection on VCC............................................................................................................... 5
5.5.Logic and dead time................................................................................................................. 5
5.6.Pulse-Generator....................................................................................................................... 5
5.7.HV-Level-Shifter....................................................................................................................... 5
5.8.Filter.......................................................................................................................................... 5
5.9.R-S........................................................................................................................................... 5
5.10.UV Detection for the High Side.............................................................................................. 6
5.11.DRV........................................................................................................................................ 6
6.Pinning................................................................................................................................... 6
7.Pin description....................................................................................................................... 7
8.Absolute Maximum Ratings................................................................................................... 8
9.Electrical Characteristics........................................................................................................ 8
9.1.Operational Range................................................................................................................... 8
9.2.DC Characteristics................................................................................................................... 9
9.3.Logic Characteristics................................................................................................................ 9
9.4.AC Characteristics.................................................................................................................. 10
10.IC-Package........................................................................................................................ 10
11.IC-Marking.......................................................................................................................... 11
12.Ordering Information.......................................................................................................... 11
13.Notes and Cautions............................................................................................................ 11
13.1.ESD Protection..................................................................................................................... 11
13.2.Storage conditions................................................................................................................ 11
14.Disclaimer.......................................................................................................................... 12
15.Contact Information............................................................................................................ 12
AMG-DF102
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30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
4. Block Diagram
VDD
VBH
VDD
UV
HV
LEVEL
SHIFTER
VCC
INB
+
S Q
FILTER
_
R Q
DRV
OHB
PULSE
GENERATOR
Logic
-
VSH
VB1
UV
HV
LEVEL
SHIFTER
IN1
+
Logic
and
dead time
-
S Q
FILTER
_
R Q
DRV
OH1
PULSE
GENERATOR
VS1
VDD
VCC
OL1
DRV
Vref
VB2
UV
HV
LEVEL
SHIFTER
IN2
+
Logic
and
-
dead time
S Q
FILTER
_
R Q
PULSE
GENERATOR
DRV
OH2
VS2
VCC
VDD
ENQ
ENABLE
UV
Detect
DRV
OL2
GND
PGND
Figure 2: Block Diagram
AMG-DF102
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
5. Block Descriptions
5.1. Voltage Divider VCC
• Internal reference voltage for logic inputs (connection to INB, IN1, IN2).
5.2. Input Enable
• Enables the digital inputs and the UV-Detection for VCC. The ENQ is a CMOS input
equipped with a pull-up resistor. The enable input needs be pulled low to enable device
operation. If the enable pin is left unconnected or pulled high, all outputs are pulled low.
5.3. Trigger input
• CMOS differential amplifier with hysteresis. The negative input is attached to the internal
reference while the positive input is connected to the corresponding input pins. Inputs are
equipped with a pull-down resistor.
5.4. UV Detection on VCC
• CMOS comparator with a hysteresis to detect under voltage supply conditions on VCC.
5.5. Logic and dead time
• Input logic and dead time insertion. The dead time is set internally by an RC-combination.
5.6. Pulse-Generator
• Pulse generation from falling and rising edges of the input signal. These pulses are
transmitted to the floating high side gate driver stages. This leads to lower power
consumption.
5.7. HV-Level-Shifter
• Level shifting the pulses of the pulse generators to the floating high side driver output
stages.
5.8. Filter
• Filtering noise and transients.
5.9. R-S
•
Latch for storing the current output state.
AMG-DF102
Revision: AB
30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
5.10. UV Detection for the High Side
•
Detecting under voltage conditions during power up and during operation. Pulling the high
side drivers low in case of too low a supply.
5.11. DRV
•
CMOS gate driver output stage for low and high side.
6. Pinning
PIN#
Symbol
Description
1
INB
Logic input for high side gate driver output OHB
2
ENQ
Input to enable device operation (active low)
3
GND
Ground
4
PGND
Power Ground
5
OL1
Low side gate driver output, inverted to IN1
6
n.c.
7
VB1
High side gate driver supply
8
OH1
High side gate driver output, in phase with IN1
9
VS1
High side gate driver supply return
10
n.c.
11
VBH
High side buck driver supply
12
OHB
High side gate driver output, in phase with INB
13
VSH
High side buck driver supply return
14
n.c.
15
n.c.
16
VS2
High side gate driver supply return
17
OH2
High side gate driver output, in phase with IN2
18
VB2
High side gate driver supply
19
n.c.
20
VDD
Low side driver supply
21
OL2
Low side gate driver output, inverted to IN2
22
VCC
Logic supply
23
IN2
Input for high and low side gate drive outputs OH2 + OL2
24
IN1
Input for high and low side gate drive outputs OH1 + OL1
AMG-DF102
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30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
24
1
IN1
ENQ
IN2
ɑDF102
YYWW
LLxxyy.z
INB
GND
PGND
VCC
OL2
OL1
VDD
VB1
VB2
OH1
OH2
VS1
VS2
VBH
OHB
13
12
VSH
Top View
7. Pin description
VCC
Logic supply
VDD
Low side driver supply
GND
Signal and logic GND
PGND
Power ground, supply return for low side gate drivers (bridge)
IN1
Signal input for the first half bridge
IN2
Signal input for the second half bridge
INB
Signal input for the buck converter high side driver
ENQ
Enable input, enables the inputs, low active
VBH
High side supply for the buck converter high side driver
OHB
High side buck converter gate driver output
VSH
High side supply return for the buck converter gate drive OHB
VB1,2
High side supply for high side gate drivers (bridge)
OH1,2
High side gate driver outputs (bridge)
VS1,2
High side supply return for gate drivers OH1,2 (bridge)
OL1,2
Low side driver outputs (bridge)
AMG-DF102
Revision: AB
30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
8. Absolute Maximum Ratings
The maximum ratings may not under any circumstances be exceeded, TA = -25°C bis 85°C
#
Symbol
Parameter
Min
Max
Unit
1
VCC
Logic supply voltage
-0.3
18
V
2
VDD
Low side driver supply voltage
-0.3
18
V
3
VBx
High side floating supply voltage
-0.3
4
VSx
5
618
V
High side floating supply offset voltage
VBX - 18
1
VBX + 0.3
V
VOH
High side floating output voltage
VSX –0.3
VBX + 0.3
V
6
VINX
Logic input voltage (IN1, IN2, INB)
-0.3
VCC+0.3
V
7
VENQ
Input voltage Enable (ENQ)
-0.3
VCC+0.3
V
8
TJ
Junction Temperature
-25
150
°C
9
Tstg
Storage temperature range
-55
150
°C
10
Rthja
Thermal resistance junction to ambient
80
K/W
11
VESD3
ESD (acc. HMB), pins IN1, IN2, INB and ENQ
-500
500
V
12
VESD
ESD (according to HMB), all other pins
-1000
1000
V
2
4
9. Electrical Characteristics
9.1. Operational Range
#
Symbol
Parameter
Min
Max
Unit
VSX +12
VSX +15
V
400
V
1
VBx
Absolute high side supply voltage
2
VSx
High side floating supply offset voltage
3
VDD
Low side driver supply voltage
12
15
V
4
VCC
Logic supply voltage
12
15
V
5
fs
Switching frequency
120
KHz
6
VINX
Logic input voltage ( INB, IN1, IN2, pull-down)
VGND
VGND + VCC
V
7
VENQ
Enable input voltage (ENQ, pull-up)
VGND
VGND + VCC
V
8
tpw
High side pulse width (PWM)
9
TA
Ambient temperature
1
-25
µs
85
°C
1 The suffix x is a replacement for a respective 1, 2 or B
2 TJ = Rthja * Ptot + TA
3 HBM for Inputs only
4 HBM for Inputs only
AMG-DF102
Revision: AB
30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
9.2. DC Characteristics
DC characteristics contain the spread of values guaranteed within the specified supply voltage
and temperature range and the technology process parameter range unless otherwise
specified.
Typical values are valid at VCC = VDD =15V, VBX-VSX =15V, ENQ=Low, TJ = 25°C unless stated.
#
Symbol Parameter
Conditions Min Typ
Max
Unit
1
IQCC
Quiescent VCC supply current
INX=open
0.8
1.4
mA
2
IQDD
Quiescent VDD supply current
INX=open
2
2.5
mA
3
IQBH
Quiescent VBH supply current
INX=open
0.4
0.6
mA
4
IQBX
Quiescent VBX supply current
INX=open
0.9
1.6
mA
5
VCCUV+
Rising VCC supply undervoltage threshold
INX=open
tbd 11.6
tbd
V
6
VCCUV-
Falling VCC supply undervoltage threshold
INX=open
tbd
10.
8
tbd
V
7
IO-
Output Low short circuit pulsed current
VO=12V
200
tbd
-
mA
150
tbd
-
mA
Min
Typ
Max
Unit
tPW<1µs,
TJ =25°C
8
IO+
Output High short circuit pulsed current
VO=0V
tPW<1µs,
TJ =25°C
9.3. Logic Characteristics
#
Symbol Parameter
Conditions
1
VINL
Low input voltage (INB, IN1, IN2)
-
4.5
5.5
V
2
VINH
High input voltage (INB, IN1, IN2,)
9.0
10.0
-
V
3
IINH
High input bias current (pull-down)
-
20
60
µA
4
IINL
Low input bias current (pull-down)
-
-
1
µA
AMG-DF102
Revision: AB
30. Nov. 2010
VIN=0.1V
© All rights reserved
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
9.4. AC Characteristics
AC characteristics contain the spread of values guarantee within the specified supply voltage
and temperature range and the technology process parameter range unless otherwise
specified.
All values are valid at VCC = VDD =15V, VBX-VSX =15V, CLoad=1000pF, TJ= 25°C unless stated.
#
Symbol
Parameter
Typ
Max
Unit
1
tonINX5
Turn-on propagation delay
1200
ns
2
toffINX4
Turn-off propagation delay
50
ns
3
tr
Turn on rise time
100
ns
4
tf
Turn off fall time
50
ns
10. IC-Package
24-pin Plastic SOP
A1
w
b
L
Small Outline Package (SOP)
SOP24
H
D
E
e
A
JEDEC MS-012
300 mil
Dimensions
(mm)
D
E
H
A
A1
e
b
L
w
nom
15.3
7.5
10.31
2.54
0.20
1.27
0.41
0.76
4°
5 The suffix x is a replacement for a respective 1, 2
AMG-DF102
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30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
11. IC-Marking
ɑDF102
4 digits date code = 2 digits year + 2 digits work week
8 digits lot number = 2 digits fab process + 4 digits lot number + 1 digit sub lot
12. Ordering Information
AMG-DF102-ISP24U
shipment in tubes
AMG-DF102-ISP24R
shipment in Tape & Reel
13. Notes and Cautions
13.1. ESD Protection
The Requirements for Handling Electrostatic Discharge Sensitive Devices are described in the
JEDEC standard JESD625-A. Please note the following recommendations:
 When handling the device, operators must be grounded by wearing a for the purpose
designed grounded wrist strap with at least 1MΩ resistance and direct skin contact.
 Operators must at all times wear ESD protective shoes or the area should be
surrounded by for ESD protection intended floor mats.
 Opening of the protective ESD package that the device is delivered in must only occur at
a properly equipped ESD workbench. The tape with which the package is held together
must be cut with a sharp cutting tool, never pulled or ripped off.
 Any unnecessary contact with the device or any unprotected conductive points should be
avoided.
 Work only with qualified and grounded tools, measuring equipment, casing and
workbenches.
 Outside properly protected ESD-areas the device or any electronic assembly that it may
be part of should always be transported in EGB/ESD shielded packaging.
13.2. Storage conditions
The AMG-DF102 corresponds to moisture sensitivity classification ML2, according to JEDEC
standard J-STD-020, and should be handled and stored according to J-STD-033.
AMG-DF102
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30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
14. Disclaimer
Information given in this data sheet is believed to be accurate and reliable. However, no
responsibility is assumed for the consequences of its use nor for any infringement of patents
or other rights of third parties that may result from its use.
The values stated in Absolute Maximum Ratings may under no circumstances be exceeded.
No warranty is given for use in life support systems or medical equipment without the specific
written consent of alpha microelectronics gmbh. For questions regarding the application
please contact the publisher.
The declared data are only a description of the product. They are not guaranteed properties
as defined by law. Examples are given without obligations and cannot give rise to any liability.
Reprinting of this data sheet – or any part of it – is not allowed without the license of the
publisher. Data sheets are subject to change without any notice.
15. Contact Information
This data sheet is published by alpha microelectronics gmbh. To order samples or inquire
information please contact:
alpha microelectronics gmbh
Im Technologiepark 1
15236 Frankfurt (Oder)
Germany
am.info@alpha-microelectronics.de
www.alpha-microelectronics.de
+49-335-557-1750 (telephone)
+49-335-557-1759 (fax)
© All rights reserved.
AMG-DF102
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30. Nov. 2010
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