AM2308NE Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 @ VGS = 4.5V 30 82 @ VGS = 2.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology ID (A) 3.5 3.0 G D S ESD Protected 2000V o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 30 V ±12 Gate-Source Voltage VGS o TA=25 C a Continuous Drain Current o 3.5 ID TA=70 C b IDM Pulsed Drain Current a IS Continuous Source Current (Diode Conduction) o TA=25 C a Power Dissipation o PD TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Steady-State 16 A 1.25 1.25 W 0.8 o C TJ, Tstg -55 to 150 Symbol t <= 10 sec A 2.8 RθJA Maximum 100 166 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2308NE_B AM2308NE Analog Power SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage IDSS ID(on) rDS(on) gfs VSD 0.6 VDS = 0 V, VGS = 12 V ±10 VDS = 24 V, VGS = 0 V 1 25 VDS = 24 V, VGS = 0 V, TJ = 55oC VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.5 A VGS = 2.5 V, ID = 3 A VDS = 15 V, ID = 3.5 A IS = 2.3 A, VGS = 0 V 6 V uA uA A 60 82 6.9 0.8 mΩ S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, VGS = 2.5 V, ID = 3.5 A VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V 6.3 0.9 1.9 16 5 23 3 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM2308NE_B AM2308NE Analog Power Typical Electrical Characteristics (N-Channel) 20 18 16 20 14 ID Drain Current (A) ID - Drain Current (A) 4.5V 15 12 2.5V 25C 10 10 5 0 8 6 4 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 VGS Gate to Source Voltage (V) Output Characteristics Transfer Characteristics 2400 2000 C - Capacitance (pF) r DS(ON) - Normalized On-Resistance 1.4 1.2 4.5V 1 1600 CISS 1200 800 400 10V COSS 0 5 10 15 20 0 25 5 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 rDS(ON) - On-Resistance (Normalized) 1.6 8 Vgs Voltage ( V ) CRSS 0 0.8 6 4 2 VGS = 4.5V 1.4 1.2 1 0.8 0.6 0 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (oC) Gate charge ( nC ) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY Publication Order Number: DS-AM2308NE_B 150 AM2308NE Analog Power Typical Electrical Characteristics (N-Channel) 0.07 10 r DS(ON) - On-Resistance (OHM) IS - Source CURRENT (A) 100 TA = 125 oC 1 o 25 C 0.1 0.01 0.001 0.06 0.05 0.04 0.03 0.02 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 0.01 1.4 2 VSD - Source-to-DrainVoltage (V) 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 1.8 ID = 250µA 20 Power (W) 1.4 1.2 1 0.8 10 0.6 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 0.01 150 0.1 1 TJ - Temperature (o C) 10 Time (sec) Threshold Voltage Single Pulse Power 1 D =0.5 RθJ A(t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal V GS(th) - Variance (V) 1.6 RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM2308NE_B 100 AM2308NE Analog Power Package Information 5 PRELIMINARY Publication Order Number: DS-AM2308NE_B