Analog Power AM2314N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.032 @ VGS = 4.5 V 20 0.044 @ VGS = 2.5V Low rDS(on) Provides Higher Efficiency and Extends Battery Life Low Gate Charge Fast Switch Miniature SOT-23 Surface Mount Package Saves Board Space ID (A) 4.6 3.9 G D S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter 20 Drain-Source Voltage VDS V VGS ±12 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 4.0 ID IDM ±20 IS 1.6 o TA=25 C a Power Dissipation o TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient A 3.1 A 1.3 PD W 0.8 o TJ, Tstg -55 to 150 C Symbol Maximum Units t <= 5 sec Steady-State RTHJA 100 166 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 July, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM2314_E Analog Power AM2314N SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage rDS(on) gfs VSD 0.7 VDS = 0 V, VGS = ±8 V ±100 VDS = 16 V, VGS = 0 V 1 10 o VDS = 16 V, VGS = 0 V, TJ = 55 C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.6 A VGS = 2.5 V, ID = 3.9 A VDS = 10 V, ID = 4.0 A IS = 1.6 A, VGS = 0 V V nA uA 10 A 32 44 mΩ 11.3 0.75 S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Ddrain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr VDS = 10 V, VGS = 4.5 V, ID = 4.0 A VDD = 10 V, RL = 15 Ω, ID = 1 A, VGEN = 4.5 V IF = 1.6 A, di/dt = 100 A/uS 13.4 0.9 2.0 8 24 35 10 40 nC ns Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 July, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM2314_E Analog Power AM2314N Typical Electrical Characteristics (N-Channel) 30 TA = -55oC VGS = 4.5V 3.5V 25 3.0V ID, DRAIN CURRENT (A ID, DRAIN CURRENT (A 30 2.5V 2.0V 20 15 10 125oC 20 15 10 5 5 0 0 0 0.5 1 1.5 2 2.5 0.5 3 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics Figure 1. Output Characteristics 2.5 1800 1500 2 1.5 CAPACITANCE (pF RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANC 25 oC 25 2.5V 4.5V 1 CISS 1200 900 600 COSS 300 CRSS 0.5 0 0 5 10 15 20 25 30 0 4 ID, DRAIN CURRENT (A) 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On-Resistance vs. Drain Current Figure 4. Capacitance 10 RDS(ON), NORMALIZED Vgs Voltage ( V ) 6 4 2 DRAIN-SOURCE ON-RESISTANC 1.6 8 1.4 1.2 1 0.8 0.6 -50 0 0 3 6 9 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 12 Qg, Gate Charge (nC) Figure 5. Gate Charge Figure 6. On-Resistance vs. Junction Temperature 3 July, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM2314_E 150 Analog Power AM2314N Typical Electrical Characteristics (N-Channel) 0.07 TA = 125oC 10 RDS(ON), ON-RESISTANCE (OHM IS, REVERSE DRAIN CURRENT ( 100 1 25oC 0.1 0.01 0.001 0.06 0.05 0.04 0.03 0.02 0.01 0.0001 0 0.2 0.4 0.6 0.8 1 0 1.2 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Source-Drain Diode Forward Voltage Figure 8. On-Resistance vs. Gate-to-Source Voltage P(pk), PEAK TRANSIENT POWER (W) 50 ID = 250µA 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 40 30 20 10 0 0.001 0.2 150 0.01 0.1 1 10 100 t1, TIME (sec) TA, AMBIENT TEMPERATURE (oC) Figure 9. Threshold Voltage r(t), NORMALIZEDEFFECTIVETRANSIENTTHERMALRESISTAN Vth, GATE-SOURCE THRESTHOL VOLTAGE (V) 1.2 Figure 10. Single Pulse Power 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient 4 July, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM2314_E Analog Power AM2314N Package Information 5 July, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM2314_E