Analog Power AM30N10-70D N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 4.5V ID(A) 21 19 Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 21 IDM Pulsed Drain Current b 100 IS Continuous Source Current (Diode Conduction) 30 T =25°C P 50 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 50 RθJC 3 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM30N10-70D_revC Analog Power Parameter AM30N10-70D Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 9.2 A VGS = 4.5 V, ID = 6.1 A VDS = 40 V, ID = 5.5 A IS = 9 A, VGS = 0 V Dynamic VDS = 50 V, VGS = 4.5 V, ID = 9 A VDD = 50 V, RL = 5.2 Ω , ID = 9.6 A, VGEN = 10 V, RGEN = 6 Ω Min Typ Max 1 ±10 1 25 34 Unit V uA uA A 78 92 20 0.8 21 3.8 14.2 7.5 13.6 41 35 mΩ S V nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS-AM30N10-70D_revC Analog Power AM30N10-70D Typical Electrical Characteristics 10 TJ = 25°C 9 0.12 8 ID - Drain Current (A) RDS(on) - On-Resistance (Ω) 0.14 0.1 3.5V 0.08 4.0V 4.5V 0.06 6V,8V,10V 0.04 7 6 5 4 3 2 0.02 1 0 0 0 2 4 6 8 10 0 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 2 3 4 2. Transfer Characteristics 100 0.2 TJ = 25°C 0.18 TJ = 25°C ID = 9A 0.16 IS - Source Current (A) RDS(on) - On-Resistance (Ω) 1 VGS - Gate-to-Source Voltage (V) 0.14 0.12 0.1 0.08 0.06 0.04 10 1 0.1 0.02 0 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 10 10V,8V,6V 9 1600 4.5V 4.0V 3.5V F = 1MHz 1400 1200 7 6 1.2 4. Drain-to-Source Forward Voltage Capacitance (pf) ID - Drain Current (A) 8 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) 3.0V 5 4 3 Ciss 1000 800 600 400 2 1 200 0 0 Coss Crss 0 0.5 1 1.5 2 0 5. Output Characteristics © Preliminary 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 6. Capacitance 3 Publication Order Number: DS-AM30N10-70D_revC Analog Power AM30N10-70D Typical Electrical Characteristics 2.5 VDS = 50V 9 ID = 9A 8 RDS(on) - On-Resistance (Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 10 20 30 40 -50 -25 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAKTRANSIENT POWER (W) 200 IDM Limit 100 ID Current (A) 25 TJ - Junction Temperature (°C) 7. Gate Charge 10µS 10 100µS 1 0 1mS 10mS 100mS 1000mS 10S 100S DC Limited by RDS 0.1 0.01 180 160 140 120 100 80 60 40 20 0 0.1 1 10 100 1000 0.001 0.01 0.1 VDS Drain to Source Voltage (V) 1 10 100 1000 t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 96 °C /W 0.1 0.05 0.02 0.01 P(pk) Single Pulse t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS-AM30N10-70D_revC Analog Power AM30N10-70D Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "b" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.10 mm Total In Excess Of "b" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 5 Publication Order Number: DS-AM30N10-70D_revC