AM4512CE Analog Power P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOIC-8 saves board space • Fast switching speed • High performance trench technology ESD PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) ID (A) 40 @ VGS = 4.5V 31 @ VGS = 10V 80 @ VGS = -4.5V 52 @ VGS = -10V 30 -30 D1 SOIC-8 Top View S1 G1 S2 Protected 2000V G2 8 7 6 1 2 3 4 6.0 6.9 -4.2 -5.2 5 D1 D1 D2 D2 S2 G1 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channel Units Parameter 30 -30 Drain-Source Voltage VDS V VGS ±20 ±20 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 6.9 -5.2 5.4 -6.8 IDM 20 -20 IS 1.3 -1.3 2.1 2.1 1.3 1.3 ID o TA=25 C a Power Dissipation o TA=70 C PD Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter a t <= 5 sec Maximum Junction-to-Case Maximum Junction-to-Ambient a t <= 5 sec TJ, Tstg A A W o -55 to 150 Symbol Maximum RθJC 40 o 60 o RθJA C Units C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4512CE_A AM4512CE Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Ch Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS A On-State Drain Current Drain-Source On-ResistanceA Forward TranconductanceA ID(on) rDS(on) gfs VGS = VDS, ID = 250 uA N 1 VGS = VDS, ID = -250 uA VGS = -8 V, VDS = 0 V VGS = 8 V, VDS = 0 V VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V VDS = 5 V, VGS = 10 V VDS = -5 V, VGS = -10 V VGS= 10 V, ID = 6.9 A VGS = 4.5 V, ID = 6 A VGS= -10 V, ID = -5.2 A VGS= -4.5 V, ID = -4.2 A VDS = 15 V, ID = 6.9 A VDS = -15 V, ID = -5.2 A P P N P N N P -1.0 V ±100 ±100 -1 1 20 -20 nA uA A 31 40 52 80 N P N P 25 10 N P N P N 4.0 10 1.1 2.2 1.4 mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf N-Channel VDS=15V, VGS=10V, ID=6.9A P-Channel VDS=-15V, VGS=-10V, ID=-5.2A N-Chaneel VDD=15V, VGS=10V, ID=1A , RGEN=6Ω, P-Channel VDD=-15V, VGS=-10V, ID=-1A RGEN=6Ω P 1.7 N P N P 8 10 5 2.8 N P N P 23 53.6 3 46 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4512CE_A AM4512CE Analog Power Typical Electrical Characteristics (N-Channel) 30 TA = -55oC VDS = 5V VGS = 10V 25 6.0V 20 5.0V 4.0V 15 3.0V 10 5 25oC 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 125oC 20 15 10 5 0 0 0 0.5 1 1.5 2 0.5 2.5 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 2 4.5V 1.5 6.0V 1 10V f = 1MHz VGS = 0 V 1200 CISS 900 600 COSS 300 CRSS 0 0.5 0 5 10 15 20 25 0 30 1.6 10 15V 6 4 2 0 6 9 12 25 30 1.4 1.2 1.0 0 .8 0 .6 15 -50 Qg, GATE CHARGE (nC) -2 5 0 25 50 75 10 0 12 5 150 T J Juncation Temperature ( ) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3 PRELIMINARY 20 VGS = 10V ID = 7A ID = 7A 3 15 Figure 4. Capacitance Characteristics Normalized R DS(on) VG S, G A TE-SOU RCE V OLTAG E (V ) Figure 3. On Resistance Vs Vgs Voltage 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 8 5 Publication Order Number: DS-AM4512CE_A AM4512CE Analog Power Typical Electrical Characteristics (N-Channel) RDS(ON), ON-RESISTANCE (OHM) IS, REVERSE DRAIN CURRENT (A) 100 VGS = 0V 10 o 1 TA = 125 C o 25 C 0.1 0.01 0.001 0.0001 0.1 ID = 7 A 0.08 0.06 0.04 o TA = 25 C 0.02 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 2 Figure 7. Transfer Characteristics 6 8 50 VDS = VGS ID = -250mA 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 10 Figure 8. On-Resistance with Gate to Source Voltage 2.2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) 150 175 SINGLE PULSE RqJA = 125oC/W TA = 25oC 40 30 20 10 0 0.001 0.01 TA, AMBIENT TEMPERATURE (oC) Figure 9. Vth Gate to Source Voltage Vs Temperature 0.1 1 t1, TIME (SEC) 10 100 Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 0.2 0.1 0.1 Rq J A (t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.0 P(p k) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t ) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 t1, TIM E (s e c ) 1 10 100 1000 Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM4512CE_A AM4512CE Analog Power Typical Electrical Characteristics (P-Channel) 30 15 -6.0V o VDS = -5V -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -10V 20 -4.0V 10 o TA = -55 C 25 C 12 o 125 C 9 6 3 -3.0V 0 0 0 1 2 3 4 5 1 6 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 3.5 4 4.5 with Source Current and Temperature 800 2 f = 1 MHz VGS = 0 V 700 1.8 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 Figure 2. Body Diode Forward Voltage Variation Figure 1. On-Region Characteristics 1.6 -4.5V -6.0V 1.4 1.2 -10V 1 CISS 600 500 400 300 COSS 200 100 0.8 0 6 12 18 24 CRSS 0 30 0 5 -ID, DRAIN CURRENT (A) 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On Resistance Vs Vgs Voltage Figure 4. Capacitance Characteristics 10 1.6 ID = -5.7A VGS = 10V ID = 5.7A 1.4 8 -15V Normalized RDS(on) -VGS, GATE-SOURCE VOLTAGE (V) 2 -VGS, GATE TO SOURCE VOLTAGE (V) 6 4 2 1.2 1.0 0.8 0.6 0 0 2 4 6 8 -50 10 0 25 50 75 100 125 150 TJ Juncation Temperature (C) Qg, GATE CHARGE (nC) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 5 PRELIMINARY -25 Publication Order Number: DS-AM4512CE_A AM4512CE Analog Power 0.25 100 ID = -5.7A VGS =0V 10 RDS(ON), ON-RESISTANCE (OHM) -IS, REVERSE DRAIN CURRENT (A) Typical Electrical Characteristics (P-Channel) o TA = 125 C 1 0.1 o 25 C 0.01 0.001 0.0001 0 0.2 0.15 0.1 0.05 TA = 25oC 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. On-Resistance with Gate to Source Voltage 50 VDS = VGS ID = -250mA 2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 2.2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (oC) SINGLE PULSE RqJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Vth Gate to Source Voltage Vs Temperature Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 0.1 D =0.5 0.2 Rq J A(t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.1 0.05 P (pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIM E (s ec) Figure 11. Transient Thermal Response Curve 6 PRELIMINARY Publication Order Number: DS-AM4512CE_A AM4512CE Analog Power Package Information SO-8: 8LEAD H x 45° 7 PRELIMINARY Publication Order Number: DS-AM4512CE_A AM4512CE Analog Power Ordering information • AM4512CE-T1-XX – – – – – – – A: M: 4512: C: E: T1: XX: Analog Power MOSFET Part number Complementary ESD Protected Tape & reel Blank: Standard PF: Leadfree 8 PRELIMINARY Publication Order Number: DS-AM4512CE_A