AO3416 20V N-Channel MOSFET General Description Product Summary The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. VDS 20V 6.5A ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) < 22mΩ RDS(ON) (at VGS = 2.5V) < 26mΩ RDS(ON) (at VGS = 1.8V) < 34mΩ ESD protected SOT23 Top View D Bottom View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: July 2010 Steady-State Steady-State A 30 W 0.9 TJ, TSTG Symbol t ≤ 10s V 1.4 PD TA=70°C ±8 5.2 IDM TA=25°C Units V 6.5 ID TA=70°C Maximum 20 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3416 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±8V VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 ±10 1.1 16 22 22 30 VGS=2.5V, ID=5.5A 18 26 mΩ VGS=1.8V, ID=5A 21 34 mΩ 50 1 V 2 A 1650 pF TJ=125°C gFS Forward Transconductance VDS=5V, ID=6.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge A 0.62 1295 VGS=0V, VDS=10V, f=1MHz mΩ S 160 pF 87 pF VGS=0V, VDS=0V, f=1MHz 1.8 KΩ 10 nC VGS=4.5V, VDS=10V, ID=6.5A 4.2 nC 2.6 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA V 0.7 VGS=4.5V, ID=6.5A Coss µA 5 Gate Threshold Voltage Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=100A/µs 31 Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs 6.8 VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω 280 ns 328 ns 3.76 us 2.24 us 41 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: July 2010 www.aosmd.com Page 2 of 5 AO3416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 VDS=5V 2.5V 25 1.8V 20 3.1V 20 4.5V ID(A) ID (A) 15 15 10 VGS=1.5V 10 25°C 5 5 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 VGS=1.8V 20 VGS=2.5V 15 VGS=4.5V Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 125°C VGS=2.5V ID=5.5A 1.4 VGS=1.8V ID=5A 1.2 17 5 2 VGS=4.5V10 1 ID=6.5A 0.8 10 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 60 1.0E+01 ID=6.5A 1.0E+00 50 40 40 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 1.0E-02 125°C 30 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 5: July 2010 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1800 VDS=10V ID=6.5A 1600 1400 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1200 1000 800 600 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 TJ(Max)=150°C TA=25°C 10µs 1000 RDS(ON) limited 100µs Power (W) 10.0 ID (Amps) 20 1ms 1.0 10ms 100 100ms 0.1 TJ(Max)=150°C TA=25°C 10 10s DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: July 2010 www.aosmd.com Page 4 of 5 AO3416 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 5: July 2010 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5