AO3438 20V N-Channel MOSFET General Description Product Summary The AO3438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. A VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C ±8 V ID 2.5 IDM 16 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 0.9 TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 3 Pulsed Drain Current B A Maximum 20 RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W AO3438 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V Typ 20 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 16 TJ=55°C 5 100 VGS=4.5V, ID=3A 0.7 62 85 VGS=2.5V, ID=2.8A 58 70 mΩ 85 mΩ VGS=1.8V, ID=2.5A 68 Forward Transconductance VDS=5V, ID=3A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance 260 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=4.5V, VDS=10V, ID=3A 1 V 2 A 320 pF 48 pF pF 3 4.5 Ω 2.9 3.8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=3A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs 3.8 VGS=5V, VDS=10V, RL=3.3Ω, RGEN=6Ω mΩ S 27 Body Diode Reverse Recovery Time V 51 gFS Reverse Transfer Capacitance nA 68 TJ=125°C Static Drain-Source On-Resistance Output Capacitance 1 µA A RDS(ON) Coss Units V VDS=20V, VGS=0V IDSS Crss Max 0.4 nC 0.6 nC 2.5 ns 3.2 ns 21 ns 3 ns 19 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev2: Nov. 2010 2 FR-4 board with 2oz. Copper, in a still12 air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 16 VDS=5V 4.5V 12 ID(A) ID (A) 2V 2.5V 12 8 8 VGS=1.5V 4 4 125°C 25°C 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance 120 100 RDS(ON) (mΩ ) 1 VGS=1.8V 80 VGS=2.5V 60 VGS=1.8V ID=2A 1.4 VGS=2.5V ID=2.8A VGS=4.5V ID=3A 1.2 1 VGS=4.5V 40 0.8 0 3 6 9 12 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 120 1E+01 ID=3A 1E+00 12 125°C 1E-01 80 IS (A) RDS(ON) (mΩ ) 100 125°C 1E-02 25°C 1E-03 60 1E-04 25°C 40 1E-05 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 400 VDS=10V ID=3A 3 2 Ciss 300 Capacitance (pF) VGS (Volts) 4 200 Coss 100 1 0 Crss 0 0 0.5 1 1.5 2 2.5 3 3.5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 1000 100.00 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 10.00 Power (W) 100µ ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1m s 10ms 1.00 RDS(ON) limited 100 0.1s 0.10 DC 1s 1 0.00001 0.01 0.1 1 10 10 100 0.001 0.1 10 1000 VDS (Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000