AO4202 30V N-Channel MOSFET General Description Product Summary The AO4202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. VDS 30V 19A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.3mΩ RDS(ON) (at VGS = 4.5V) < 7mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 19 ID TA=70°C Maximum 30 15 A Pulsed Drain Current C IDM 130 Avalanche Current C IAS, IAR 38 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 72 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2 : Nov 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4202 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 130 TJ=55°C µA 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=19A 1.8 4.4 Static Drain-Source On-Resistance VGS=4.5V, ID=15A 5.5 gFS Forward Transconductance VDS=5V, ID=19A 65 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 2.3 nA V A RDS(ON) TJ=125°C Units 5.3 6.5 7 mΩ mΩ S 1 V 4 A 2200 pF 1450 1840 500 720 940 pF 38 63 110 pF 0.3 0.7 1.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 23 29 35 nC Qg(4.5V) Total Gate Charge 10 13 16 nC 3 4.2 5 nC 4.2 6 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=19A 2.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=19A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=19A, dI/dt=500A/µs 6.5 ns 7 ns 21 ns 3.5 ns 12 15 18 25 32 38 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2 : Nov 2010 www.aosmd.com Page 2 of 6 AO4202 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 5V 6V 10V 80 VDS=5V 3.5V 80 60 ID(A) ID (A) 60 40 40 3V 125°C 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 8 2.5 3 3.5 4 Normalized On-Resistance 1.8 VGS=4.5V 6 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 VGS=10V 2 VGS=10V ID=19A 1.6 1.4 1.2 VGS=4.5V ID=15A 1 17 5 2 10 0.8 0 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 20 1.0E+02 ID=19A 1.0E+01 40 15 1.0E+00 10 IS (A) RDS(ON) (mΩ ) 1.5 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2 : Nov 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4202 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=19A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 Coss 1000 500 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 100 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 IAR (A) Peak Avalanche Current 1000.0 100.0 TA=100°C TA=150°C ID (Amps) TA=25°C 10.0 10µs 100µs RDS(ON) limited 1ms 1.0 10ms TA=125°C TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 10 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 2 : Nov 2010 www.aosmd.com Page 4 of 6 AO4202 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2 : Nov 2010 www.aosmd.com Page 5 of 6 AO4202 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2 : Nov 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6