AO4310 36V N-Channel MOSFET General Description Product Summary The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 36V 27A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3.1mΩ RDS(ON) (at VGS = 4.5V) < 4.2mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V 27 ID TA=70°C Maximum 36 22 A 390 IDM Avalanche Current C IAS, IAR 67 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 224 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: February 2011 3.6 PD TA=70°C Steady-State Steady-State -55 to 150 TJ, TSTG Symbol t ≤ 10s W 2.3 RθJA RθJL www.aosmd.com Typ 27 52 10 °C Max 35 65 15 Units °C/W °C/W °C/W Page 1 of 6 AO4310 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 390 Units V 36 VDS=36V, VGS=0V VGS(th) 100 nA 1.8 2.3 V 2.6 3.1 3.7 4.5 VGS=4.5V, ID=20A 3.3 4.2 VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 151 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance mΩ mΩ S 1 V 5 A 2595 3248 3900 pF VGS=0V, VDS=18V, f=1MHz 790 1130 1470 pF 16 54 95 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.8 2.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 37 46.4 57 nC Qg(4.5V) Total Gate Charge 16 20.6 27 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=18V, ID=20A VGS=10V, VDS=18V, RL=0.9Ω, RGEN=3Ω 8 nC 6.2 nC 8.5 ns 4.8 ns 40.8 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 17 21.7 26 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 48 60.5 73 9.8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2011 www.aosmd.com Page 2 of 6 AO4310 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 80 80 4.5V 60 3V ID(A) ID (A) 60 40 40 20 125°C 25°C 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 6 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 3 4 5 6 1.8 5 VGS=4.5V 4 3 2 VGS=10V 1 0 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 17 5 2 10 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 40 9 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: February 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4310 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 4500 VDS=18V ID=20A 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 3500 3000 2500 2000 Coss 1500 1000 Crss 500 0 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics 45 50 0 IAR (A) Peak Avalanche Current 1000.0 6 12 18 24 30 VDS (Volts) Figure 8: Capacitance Characteristics 36 1000.0 10µs TA=25°C TA=100°C ID (Amps) 100.0 100.0 TA=150°C RDS(ON) limited 100µs 10.0 1ms 1.0 10ms TA=125°C 10.0 TJ(Max)=150°C TA=25°C 0.1 100ms DC 10s 0.0 1.0 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: February 2011 www.aosmd.com Page 4 of 6 AO4310 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=65°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: February 2011 www.aosmd.com Page 5 of 6 AO4310 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: February 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6