AOSMD AO4407

AO4407
30V P-Channel MOSFET
General Description
Product Summary
The AO4407 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-20V)
-30V
-12A
RDS(ON) (at VGS=-20V)
< 13mΩ
VDS
RDS(ON) (at VGS =-10V)
< 14mΩ
RDS(ON) (at VGS =-5V)
< 30mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±25
V
-12
ID
TA=70°C
Maximum
-30
-10
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
26
A
Avalanche energy L=0.3mH C
TA=25°C
EAS, EAR
101
mJ
Power Dissipation B
Junction and Storage Temperature Range
Rev 13: July 2010
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
-60
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
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-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4407
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
±100
nA
-2.8
V
VGS=-20V, ID=-12A
8.5
13
mΩ
VGS=-10V, ID=-12A
10
14
12
19
30
A
Static Drain-Source On-Resistance
VGS=-5V, ID=-7A
19
gFS
Forward Transconductance
VDS=-5V, ID=-10.5A
27
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
-0.72
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
2060
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
24
VGS=-10V, VDS=-15V, ID=-12A
VGS=-10V, VDS=-15V,
RL=1.25Ω, RGEN=3Ω
mΩ
S
V
-4
A
2600
pF
370
1.2
mΩ
-1
pF
295
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
-2.25
RDS(ON)
Crss
Units
V
VDS=-30V, VGS=0V
IGSS
Coss
Max
pF
2.4
3.6
30
36
Ω
nC
4.6
nC
10
nC
11
ns
9.4
ns
24
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-12A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
22
12
ns
40
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 13: July 2010
www.aosmd.com
Page 2 of 5
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-10V
-6V
VDS=-5V
-5V
60
-ID(A)
-ID (A)
60
-4.5V
40
125°C
20
-4V
20
40
25°C
VGS=-3.5V
0
0
0
1
2
3
4
1
5
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.6
25
VGS=-5V
RDS(ON) (mΩ
Ω)
2
20
15
10
VGS=-10V
5
0
VGS=-10V
ID=-12A
1.4
17
5
2
10
1.2
1
VGS=-5V
ID=-7A
0.8
0
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
30
1.0E+01
ID=-12A
1.0E+00
25
40
20
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°C
1.0E-02
15
25°C
1.0E-03
25°C
10
1.0E-04
1.0E-05
5
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 13: July 2010
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=-15V
ID=-12A
2500
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
2000
1500
1000
Coss
500
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
1000.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
TA=25°C
10.0
1000
10µs
100µs
RDS(ON)
limited
Power (W)
ID (Amps)
100.0
1ms
1.0
100
10ms
10
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
1
0.0
0.01
0.1
1
VDS (Volts)
10
0.00001
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 13: July 2010
www.aosmd.com
Page 4 of 5
AO4407
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 13: July 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5