AO4410 30V N-Channel MOSFET General Description Product Summary The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. VDS (V) = 30V (VGS = 10V) ID = 18A RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 6.2mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current AF Pulsed Drain Current TA=70°C B Avalanche Current B Maximum Junction-to-Lead C V 15 IDM 80 TJ, TSTG Symbol Alpha & Omega Semiconductor, Ltd. W 2.1 EAR t ≤ 10s Steady-State Steady-State A 3 IAR B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ±12 ID PD TA=70°C Repetitive avalanche energy 0.3mH Units V 18 TA=25°C Power Dissipation Maximum 30 RθJA RθJL 30 A 135 mJ -55 to 150 °C Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 ID(ON) On state drain current V VGS=4.5V, VDS=5V 80 TJ=55°C 5 VGS=10V, ID=18A TJ=125°C VGS=4.5V, ID=15A 100 nA 1.5 V 4.7 5.5 6.4 7.4 5.2 6.2 mΩ 1 V 4.5 A A Forward Transconductance VDS=5V, ID=18A 102 VSD Diode Forward Voltage IS=1A,VGS=0V 0.64 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 9130 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=10V, VDS=15V, ID=18A pF 0.4 0.8 Ω 72.4 85 nC Qgd Gate Drain Charge 16.8 tD(on) Turn-On DelayTime 11 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω Turn-On Rise Time Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs pF pF 542 Gate Source Charge tr 10500 387 Qgs tD(off) mΩ S 625 0.2 µA 1.1 gFS Coss Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 13.4 nC nC 15 ns ns 7 11 99 135 ns 13 19.5 ns 33 40 22.2 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev7: Nov 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100000 5 VDS=15V ID=18A Ciss Capacitance (pF) VGS (Volts) 4 3 2 10000 Coss 1000 1 Crss 0 100 0 10 20 30 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics 90 0 100.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 RDS(ON) limited 100µs 10.0 80 1ms 0.1s ID (Amps) TJ(Max)=150°C TA=25°C 10µs Power (W) 10ms 1s 10s 60 40 DC 1.0 20 TJ(Max)=150°C TA=25°C 0 0.001 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 5 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 VDS=5V 2.5V 40 ID(A) ID (A) 40 VGS=2V 30 30 20 20 10 10 125°C 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 6.0 Normalized On-Resistance 1.6 VGS=4.5V 5.5 RDS(ON) (mΩ ) 25°C 5.0 VGS=10V 4.5 4.0 VGS=4.5V ID=18A 1.4 VGS=10V 1.2 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1.0E+02 1.0E+01 12 1.0E+00 125°C 8 IS (A) RDS(ON) (mΩ ) ID=18A 125°C 1.0E-02 1.0E-03 25°C 4 1.0E-01 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC Qgs Vds Qgd - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com