AOSMD AO4496_12

AO4496
General Description
Product Summary
The AO4496 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a DC-DC converter
application.
VDS (V) = 30V
ID = 10A
(VGS = 10V)
RDS(ON) < 19.5mΩ (VGS = 10V)
RDS(ON) < 26mΩ
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
Bottom View
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
Avalanche Current G
Repetitive avalanche energy L=0.1mH
TA=25°C
Power Dissipation A
TA=70°C
G
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
Units
V
±20
V
10
B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
30
Maximum
ID
7.5
IDM
50
IAR
17
EAR
14
Alpha & Omega Semiconductor, Ltd.
mJ
3.1
PD
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
RθJA
RθJL
-55 to 150
Typ
31
59
16
Max
40
75
24
°C
Units
°C/W
°C/W
°C/W
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AO4496
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
1
TJ = 55°C
5
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.4
ID(ON)
On state drain current
VGS = 10V, VDS = 5V
50
±100
VGS = 10V, ID = 10A
TJ=125°C
30
Diode Forward Voltage
IS = 1A,VGS = 0V
Maximum Body-Diode Continuous Current
0.76
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
Gate resistance
550
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=10A
3
µA
nA
V
A
29
VSD
Output Capacitance
19.5
26
IS
Reverse Transfer Capacitance
16
24
VDS = 5V, ID = 10A
Crss
2.5
21
Forward Transconductance
Coss
1.8
VGS = 4.5V, ID = 7.5A
gFS
Units
V
VDS = 30V, VGS = 0V
Static Drain-Source On-Resistance
Max
30
VGS(th)
RDS(ON)
Typ
mΩ
S
1
V
3
A
715
pF
110
pF
55
pF
4
4.9
Ω
9.8
13
nC
4.6
6.1
nC
1.8
nC
Gate Drain Charge
2.2
nC
Turn-On DelayTime
5
ns
VGS=10V, VDS=15V, RL= 1.5Ω,
RGEN=3Ω
3.2
ns
24
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=10A, dI/dt=500A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
14
Body Diode Reverse Recovery Time
6
ns
29
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
0
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev5: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS= 5V
4.5V
4V
40
40
30
ID(A)
ID (A)
30
3.5V
20
20
125°C
VGS= 3V
10
10
25°C
0
0
0
1
2
3
4
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
26
Normalized On
On-Resistance
1.8
24
RDS(ON) (mΩ
Ω)
2
VGS= 4.5V
22
20
18
VGS= 10V
16
14
0
5
10
15
VGS= 10V
ID= 10A
1.6
1.4
VGS= 4.5V
ID= 7.5A
1.2
1.0
0.8
IF=-6.5A,
dI/dt=100A/µs
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
ID= 10A
45
1E+01
1E+00
35
1E-01
125°C
30
IS (A)
RDS(ON) (mΩ
Ω)
40
25
1E-02
125°C
1E-03
25°C
20
1E-04
25°C
15
1E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS= 15V
ID= 10A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
600
400
200
Coss
Crss
0
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
TJ(Max)=150°C
TA=25°C
10µs
ID (Amps)
1
1ms
RDS(ON)
limited
10ms
100mss
10s
0.1
0.01
IF=-6.5A, dI/dt=100A/µs
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
1
100
10
DC
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
100µs
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
100
1
0.0001
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
PD
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000
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AO4496
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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