AO4624 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4624/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. AO4624 and AO4624L are electrically identical. -RoHS Compliant -AO4624L is Halogen Free n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=-10V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! SOIC-8 D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 SOIC-8 Top View Bottom View VGS Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 6.9 -6 ID 5.8 -5 IDM 30 -30 Avalanche Current B Repetitive avalanche energy 0.1mH B Junction and Storage Temperature Range V A 2 2 1.44 IAR 15 20 A EAR 11 20 -55 to 150 -55 to 150 mJ °C TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. Units V 1.44 PD TA=70°C Max p-channel -30 ±20 TA=25°C Continuous Drain Current A p-channel n-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage S1 S2 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 W Max 62.5 110 40 Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 40 °C/W AO4624 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 TJ=55°C gFS Forward Transconductance VDS=5V, ID=6.9A VSD Diode Forward Voltage IS=1A IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=5.0A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 10 nA 1.9 3 V 23 28 31 38 34 42 A 15.4 0.76 mΩ S V 3 A 885 pF 115 1.2 mΩ 1 pF 73 VGS=0V, VDS=0V, f=1MHz µA 100 737 VGS=0V, VDS=15V, f=1MHz 1 5 VGS=10V, ID=6.9A Static Drain-Source On-Resistance Units V 0.002 Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS Coss Typ pF 2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13.84 17 nC Qg(4.5V) Total Gate Charge 6.74 8.1 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=6.9A 1.82 nC Qgd Gate Drain Charge 3.2 tD(on) Turn-On DelayTime 4.6 7 ns tr Turn-On Rise Time 4.1 6 ns tD(off) Turn-Off DelayTime 20.6 30 ns tf Turn-Off Fall Time 5.2 8 ns 17.9 21.5 9.8 11.8 ns nC trr Qrr VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω IF=6.9A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. R θJL and RθJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 1: Jan. 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 20 10V 25 6V 5V 4.5V VDS=5V 16 4V ID(A) ID (A) 20 15 3.5V 12 8 10 125°C 4 VGS=3V 5 25°C 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 3.5 4 4.5 1.7 Normalized On-Resistance 60 50 RDS(ON) (mΩ ) 0.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 40 30 20 VGS=10V 10 1.6 ID=6.9A 1.5 VGS=10V 1.4 VGS=4.5V 1.3 ID=5A 1.2 1.1 1 0.9 0.8 0 5 10 15 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 10 ID=6.9A 60 IS Amps RDS(ON) (mΩ ) 1 50 125°C 40 125° 0.1 25°C 30 0.01 25°C 20 0.001 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 1000 10 800 Capacitance (pF) 8 VGS (Volts) 900 VDS=15V ID=6.9A 6 4 2 700 Ciss 600 500 400 300 Coss 200 Crss 100 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 Qg (nC) Figure 7: Gate-Charge characteristics 5 10 15 100 25 30 40 TJ(Max)=150°C TA=25°C 10µs 10ms 0.1s RDS(ON) limited 1 TJ(Max)=150°C TA=25°C 30 100µs 1ms 10 Power W ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 1s 20 10 10s DC 0 0.1 0.1 1 10 0.001 100 VDS (Volts) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4624 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC Id - Rg DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds AO4624 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 VDS=-24V, VGS=0V Typ Max -0.003 -1 V TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 VGS=-10V, ID=-6A ±100 nA -2.4 V 27 35 37 45 58 mΩ -1 V -4.2 A 1100 pF A Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A 45 gFS Forward Transconductance VDS=-5V, ID=-6A 13 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 920 VGS=0V, VDS=-15V, f=1MHz µA -2 RDS(ON) TJ=125°C Units mΩ S 190 pF 122 pF 3.6 5.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 18.5 22.2 nC Qg(4.5V) Total Gate Charge (4.5V) 9.6 11.6 nC VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6A Qgs Gate Source Charge Qgd Gate Drain Charge 4.5 tD(on) Turn-On DelayTime 7.7 11.5 ns tr Turn-On Rise Time 5.7 8.5 ns 20.2 30 ns 9.5 14 ns 20 24 12.3 15 ns nC VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 2.7 nC nC A: The value of R θJA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The θJA valuevalue in any given application depends on theon user's specific boardboard design. The current rating rating is based on theon t the ≤ 10s resistance The in any a given application depends the user's specific design. The current is based t ≤ thermal 10s thermal rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA and lead to ambient. RθJL and RθJC are equivalent terms referring to θJA is the sum of the thermal impedence from junction to lead R θJL θJL thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. D. The static characteristics Figures 1 to 6,12,14 are on obtained usingboard 80 µswith pulses, cyclein0.5% E. These tests are performedinwith the device mounted 1 in 2 FR-4 2oz.duty Copper, a stillmax. air environment with T A=25°C. The E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA SOA curve provides a single pulse rating. curve provides a single pulse rating. Rev 1: Jan. 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 -10V -5V 25 20 -4V -ID(A) -ID (A) 20 15 -3.5V 10 5 VDS=-5V 25 -4.5V -6V 15 10 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 80 Normalized On-Resistance 60 RDS(ON) (mΩ ) 1.5 2 2.5 3 3.5 4 4.5 5 1.6 70 VGS=-4.5V 50 40 30 VGS=-10V 20 ID=-6A 1.4 VGS=-10V 1.2 VGS=-4.5V ID=-5A 1 0.8 10 0 5 10 15 0 20 25 100 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 90 ID=-6A 1.0E+00 80 1.0E-01 125°C 70 -IS (A) RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 125°C 50 1.0E-02 1.0E-03 1.0E-04 40 25°C 1.0E-05 25°C 30 1.0E-06 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1500 10 VDS=-15V ID=-6A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss Crss 250 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 100.0 25 30 40 TJ(Max)=150°C, TA=25°C TJ(Max)=150°C TA=25°C 10µs RDS(ON) 10.0 limited 30 100µs 0.1s Power (W) -ID (Amps) 20 -VDS (Volts) Figure 8: Capacitance Characteristics 1ms 10ms 1.0 20 1s 10 10s DC 0 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.1 (s) 1 10 Pulse Width Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 AO4624 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds