AO4712 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V 13A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 11mΩ RDS(ON) (at VGS = 4.5V) < 14mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±12 V 13 ID TA=70°C Maximum 30 10 A IDM 68 Avalanche Current C IAS, IAR 15 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 11 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 8: December 2011 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 32 60 17 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4712 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=1mA, VGS=0V 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS， ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 68 VGS=10V, ID=13A TJ=125°C VGS=4.5V, ID=11A 100 nA 2.1 V 9 11 13 16 10.7 14 A Forward Transconductance VDS=5V, ID=13A 80 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 1.65 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 0.5 TJ=125°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ mΩ S 0.7 V 5 A 930 1170 1400 pF VGS=0V, VDS=15V, f=1MHz 90 128 170 pF 45 89 125 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7 8.7 10.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=13A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 3.2 nC 3 nC 6 ns 2.4 ns 23 ns 4 IF=13A, dI/dt=500A/µs ns 5.5 7 8.5 5 6.5 8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 8: December 2011 www.aosmd.com Page 2 of 6 AO4712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 35 10V 30 25 25 20 ID(A) ID (A) VDS=5V 30 2.75V 3V 2.5V 15 20 125°C 15 10 10 25°C 5 5 VGS=2.25V 0 0 0 1 2 3 4 1.5 5 13 2.5 3 Normalized On-Resistance 2 12 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 11 VGS=10V 10 9 8 1.8 VGS=10V ID=13A 1.6 17 5 2 VGS=4.5V 10 I =11A 1.4 1.2 D 1 0.8 7 1 6 0 11 16 21 26 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 25 1.0E+02 ID=13A 1.0E+01 20 125°C 40 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 15 10 1.0E-01 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 8: December 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 1200 Capacitance (pF) VGS (Volts) Ciss VDS=15V ID=13A 8 6 4 900 600 Coss 2 Crss 300 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 1000.0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 10.0 10µs 100µs RDS(ON) limited 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 1000 Power (W) ID (Amps) 100.0 100 TA=25°C 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 0.00001 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 Width (s) 10 1000 Pulse Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 8: December 2011 www.aosmd.com Page 4 of 6 AO4712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-01 0.9 0.8 VDS=30V 10A 0.6 VSD (V) IR (A) 20A 0.7 1.E-02 1.E-03 VDS=15V 0.5 5A 0.4 0.3 1.E-04 0.2 IS=1A 0.1 0 1.E-05 0 50 100 150 200 Temperature (°C) Figure 13: Diode Reverse Leakage Current vs. Junction Temperature 6 100 150 200 Temperature (°C) Figure 14: Diode Forward voltage vs. Junction Temperature 8 3 di/dt=800A/µs di/dt=800A/µs 125ºC 5 6 Qrr 3 125ºC 3 Irm 0 5 10 15 20 25 trr 4 0 0 5 10 15 20 3 Is=20A 9 125ºC 25ºC 6 1 3 S Irm 0.5 25ºC 0 0 0 1.5 trr 125ºC 2 25ºC 2 2.5 125ºC 40 2 trr (ns) 25ºC Irm (A) Qrr (nC) 4 4 30 12 8 Qrr 25 IS (A) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 125ºC 6 0.5 0 30 6 Is=20A 1 25ºC IS (A) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 1.5 S 2 1 0 2 125ºC 2 25ºC 2.5 25ºC 4 trr (ns) 25ºC 125ºC 6 Irm (A) Qrr (nC) 9 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 8: December 2011 S 12 50 S 0 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 5 of 6 AO4712 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 8: December 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6