AO4800B 30V General Description Dual N-Channel MOSFET Product Summary The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. VDS 30V 6.9A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 27mΩ RDS(ON) (at VGS = 4.5V) < 32mΩ RDS(ON) (at VGS = 2.5V) < 50mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 Bottom View D1 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±12 V 6.9 ID TA=70°C Maximum 30 5.8 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 10 mJ Power Dissipation B Junction and Storage Temperature Range Rev 4: Dec 2011 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4800B Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 100 nA 1.1 1.5 V 17.8 27 28 40 VGS=4.5V, ID=6A 19 32 mΩ VGS=2.5V, ID=5A 24 50 mΩ VGS=10V, ID=6.9A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=4.5V, VDS=15V, ID=6.9A 1.5 mΩ S 1 V 2.5 A 630 pF 75 pF 50 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 5 Gate Threshold Voltage Units V 1 IGSS Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ pF 3 4.5 6 7 Ω nC 1.3 nC 1.8 nC 3 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 2.5 ns 25 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 8.5 Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 2.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Dec 2011 www.aosmd.com Page 2 of 6 AO4800B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 15 10V 35 3V VDS=5V 4.5V 12 30 2.5V 9 ID(A) ID (A) 25 20 6 15 10 3 VGS=2V 25°C 125°C 5 0 0 0 1 2 3 4 0 5 30 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 25 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 20 15 VGS=10V VGS=4.5V ID=6A 1.6 1.4 17 5 VGS=10V 2 ID=6.9A 10 1.2 1 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 50 1.0E+01 ID=6.9A 1.0E+00 1.0E-01 125°C 30 IS (A) RDS(ON) (mΩ Ω) 40 125°C 25°C 1.0E-02 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Dec 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4800B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1000 VDS=15V ID=6.9A 800 Ciss Capacitance (pF) VGS (Volts) 4 3 2 600 400 Coss 1 200 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 8 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 IAR (A) Peak Avalanche Current TA=25°C TA=100°C 10µs 10.0 ID (Amps) TA=150°C 10.0 RDS(ON) limited 100µs 1.0 1ms 10ms TA=125°C 0.1 DC TJ(Max)=150°C TA=25°C 10s 0.0 1.0 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 4: Dec 2011 www.aosmd.com Page 4 of 6 AO4800B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: Dec 2011 www.aosmd.com Page 5 of 6 AO4800B Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4: Dec 2011 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6