AO4812 30V Dual N-Channel MOSFET General Description Product Summary The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. ID (at VGS=10V) VDS 30V 6A RDS(ON) (at VGS=10V) < 30mΩ RDS(ON) (at VGS =4.5V) < 42mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 Bottom View D2 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V 6 ID TA=70°C Maximum 30 5 A IDM 30 Avalanche Current C IAS, IAR 10 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 5 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 9: February 2011 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO4812 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 ±100 nA 1.8 2.4 V 25 30 40 48 VGS=4.5V, ID=5A 33 42 mΩ 1 V 2.5 A 310 pF VGS=10V, ID=6A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=6A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz S 45 1.6 mΩ pF 35 50 pF 3.25 4.9 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 5.2 6.3 nC Qg(4.5V) 2.55 3.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 0.85 nC 1.3 nC 4.5 ns 2.5 ns 14.5 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 8.5 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 9: February 2011 www.aosmd.com Page 2 of 5 AO4812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 30 10V VDS=5V 7V 25 4.5V 10 20 ID(A) ID (A) 4V 15 3.5V 5 10 5 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 40 35 RDS(ON) (mΩ ) 25°C 125°C VGS=4.5V 30 25 VGS=10V 1.6 VGS=10V ID=6A 1.4 17 5 2 VGS=4.5V 10 I =5A 1.2 D 1 0.8 20 0 3 6 9 12 0 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 100 1.0E+02 ID=6A 1.0E+01 40 1.0E+00 60 IS (A) RDS(ON) (mΩ ) 80 125°C 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 40 1.0E-04 25°C 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 9: February 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 VDS=15V ID=6A 350 300 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 250 200 150 Coss 100 2 50 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 10µs RDS(ON) limited 1000 100µs 1.0 Power (W) ID (Amps) 10.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 100 10 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 9: February 2011 www.aosmd.com Page 4 of 5 AO4812 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 9: February 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5