AO4822 30V Dual N-channel MOSFET General Description Product Summary The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 8A RDS(ON) (at VGS=10V) <19mΩ RDS(ON) (at VGS = 4.5V) < 26mΩ ESD Protected 100% UIS Tested 100% Rg Tested D SOIC-8 Top View Bottom View D Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G G S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 8 ID TA=70°C Maximum 30 6.5 A Pulsed Drain Current C IDM 48 Avalanche Current C IAS, IAR 19 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 18 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5 : Mar 2011 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4822 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 48 VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A 10 µA 1.8 2.4 V 15.5 19 21 25 18.5 26 mΩ 1 V 2.5 A A gFS Forward Transconductance VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS(th) Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ mΩ S 600 740 888 pF VGS=0V, VDS=15V, f=1MHz 77 110 145 pF 50 82 115 pF VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 2.5 nC 3 nC 5 ns 3.5 ns 19 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 3.5 8 10 ns Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Mar 2011 www.aosmd.com Page 2 of 6 AO4822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 4V VDS=5V 25 25 3.5V 20 ID(A) ID (A) 20 15 3V 10 15 10 125°C 5 5 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 30 2 2.5 3 3.5 4 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 5 2 10 1.2 VGS=4.5V ID=6A 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 ID=8A 35 1.0E+01 30 1.0E+00 125°C 25 IS (A) RDS(ON) (mΩ Ω) 40 1.0E-01 125°C 1.0E-02 20 1.0E-03 15 25°C 25°C 1.0E-04 10 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 5: Mar 2011 4 1.0E-05 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 400 Coss 200 Crss 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 30 1000.0 100 IAR (A) Peak Avalanche Current 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TA=25°C 100.0 TA=100°C 10 TA=125°C ID (Amps) 10µs TA=150°C RDS(ON) limited 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 0.01 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 Rev 5: Mar 2011 0.001 0.1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) www.aosmd.com 1000 Page 4 of 6 AO4822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Mar 2011 www.aosmd.com Page 5 of 6 AO4822 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 5: Mar 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6