AO4824L 30V Dual N-Channel MOSFET General Description Features Q1 The AO4824L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 27mΩ Q2 VDS(V) = 30V ID=9.8A (VGS = 10V) <13mΩ (VGS = 10V) <15mΩ (VGS = 4.5V) SOIC-8 Top View D1 D2 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TA=25°C TA=70°C Continuous Drain Current A Pulsed Drain Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET Q1 t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Maximum Junction-to-Lead C Steady-State Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Steady-State Steady-State Max Q1 30 Max Q2 30 Units V VGS ±20 ±12 V ID 8.5 6.8 9.8 7.8 A IDM 30 40 2 2 1.28 -55 to 150 1.28 -55 to 150 Typ 48 Max 62.5 Units 74 35 110 40 °C/W Typ Max Units 48 74 35 62.5 110 40 °C/W PD TJ, TSTG Symbol RθJA RθJL Symbol RθJA RθJL W °C AO4824L Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=8.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units 1 5 100 VGS=10V, ID=8.5A Static Drain-Source On-Resistance Max V 0.003 IDSS RDS(ON) Typ 1.8 V 13.8 17 20 25 21 27 mΩ 1 V 3 A 23 0.76 1250 180 0.7 mΩ S pF pF 110 VGS=0V, VDS=0V, f=1MHz nA A 1040 VGS=0V, VDS=15V, f=1MHz 3 µA pF 0.85 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19.2 23 nC Qg(4.5V) Total Gate Charge 9.36 11.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 tD(on) Turn-On DelayTime 5.2 7.5 ns tr Turn-On Rise Time ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs VGS=10V, VDS=15V, ID=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 2.6 nC nC 4.4 6.5 17.3 25 ns 3.3 5 ns 16.7 21 6.7 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 5 : Sep 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4824L Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V VDS=5V 10V 25 16 4.5V 3.5V 12 ID(A) ID (A) 20 15 8 10 125°C VGS=3V 16 4 5 22 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 26 0.76 3 2.5 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 26 Normalized On-Resistance 1.6 24 VGS=4.5V 22 RDS(ON) (mΩ ) 25°C 13.4 20 18 16 VGS=10V 14 12 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 10 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 50 1.0E+00 ID=8.5A 1.0E-01 IS (A) RDS(ON) (mΩ ) 40 30 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 10 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4824L Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 4 8 12 16 20 0 5 22 26 15 20 25 0.76 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100µs 10ms 0.1s 1s 1.0 TJ(Max)=150°C TA=25°C DC 1 20 0 0.001 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 30 10 10s 0.1 10 30 TJ(Max)=150°C TA=25°C 40 10µs Power (W) 1ms 10.0 0.1 10 50 RDS(ON) limited ID (Amps) 16 Crss 0 0 Zθ JA Normalized Transient Thermal Resistance 13.4 250 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4824L Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=9.8A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=9.8A VSD Diode Forward Voltage IS=1A IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=9A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=9.8A 1 5 IGSS Crss V 0.004 VDS=24V, VGS=0V RDS(ON) Max Units 30 VGS(th) Coss Typ 30 µA 100 nA 1.1 2 V 10.5 13 13.4 17 12 15 A 37 0.73 mΩ mΩ S 1 V 3 A 3656 4250 pF 256 pF 168 pF 0.86 1.05 Ω 30.5 36 nC Qgs Gate Source Charge 4.5 Qgd Gate Drain Charge 8.5 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr nC nC 8.2 ns VGS=10V, VDS=15V, RL=1.6Ω, RGEN=3Ω 3.1 5 ns 52.4 75 ns 5.7 8.5 ns Body Diode Reverse Recovery time IF=9.8A, dI/dt=100A/µs 21.5 26 ns Body Diode Reverse Recovery charge IF=9.8A, dI/dt=100A/µs 11 15 nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating . Rev 5: Sep 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4824L Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V VDS=5V 25 4.5V 30 20 ID(A) ID (A) 2.5V 20 VGS=2V 15 125°C 10 25°C 10 5 0 0 0 1 2 3 4 0.5 5 1 2 2.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 13 Normalized On-Resistance 1.8 VGS=4.5V 12 RDS(ON) (mΩ ) 1.5 11 VGS=10V 10 9 ID=9.8A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 30 1.0E+01 ID=9.8A 1.0E+00 25 125°C 20 IS (A) RDS(ON) (mΩ ) 1.0E-01 125°C 15 25°C 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 0 2 4 6 8 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4824L Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 5 VDS=15V ID=9.8A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V Ciss 3 2 1000 Coss 1 Crss 0 100 0 5 10 15 20 25 30 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 TJ(Max)=150°C, T A=25°C RDS(ON) limited 100µs 1ms 10.0 TJ(Max)=150°C TA=25°C 10µs 30 Power (W) ID (A) 10ms 0.1s 1.0 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 Ton 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000