AO4826 60V Dual N-Channel MOSFET General Description Product Summary The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 6.3A (VGS = 10V) RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D2 D1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead C Units V ±20 V ID 5 IDM 40 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.28 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum 60 6.3 TA=70°C TA=25°C Power Dissipation S2 S1 Pin1 RθJA RθJL Typ 50 73 31 °C Max 62.5 110 40 Units °C/W °C/W °C/W www.aosmd.com AO4826 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C VGS=10V, ID=6.3A TJ=125°C VGS=4.5V, ID=5.7A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 60 VDS=48V, VGS=0V IDSS RDS(ON) Typ 5 µA 100 nA 2.1 3 V 20 25 34 42 22 30 mΩ 1 V A mΩ gFS Forward Transconductance VDS=5V, ID=6.3A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 3 A ISM Pulsed Body Diode Current B 40 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 1920 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance S 2300 155 VGS=0V, VDS=0V, f=1MHz 0.65 0.8 Ω 47.6 58 nC 24.2 30 nC pF 116 Qg(4.5V) Total Gate Charge VGS=10V, VDS=30V, ID=6.3A Gate Source Charge pF VGS=0V, VDS=30V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs 27 0.74 pF 6 nC Qgd Gate Drain Charge 14.4 nC tD(on) Turn-On DelayTime 7.6 ns tr Turn-On Rise Time 5 ns VGS=10V, VDS=30V, RL=4.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs IF=6.3A, dI/dt=100A/µs 28.9 ns 5.5 ns 33.2 40 43 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 6 : Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4826 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V 4V 25 VDS=5V 30 125°C 20 ID(A) ID (A) 4.5V 20 3.5V 15 10 10 25°C 5 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 Normalized On-Resistance 2.2 22 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 24 VGS=4.5V 20 VGS=10V 18 16 VGS=10V ID=6.3A 2 1.8 VGS=4.5V 1.6 ID=5.7A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=6.3A 1.0E+00 40 125°C 125°C 1.0E-01 IS (A) RDS(ON) (mΩ ) 2.5 30 25°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4826 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=15V ID=6.3A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2500 2000 1500 Coss 1000 Crss 2 500 0 0 0 10 20 30 40 50 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10ms 1s 1.0 30 Power (W) ID (Amps) 10.0 TJ(Max)=150°C TA=25°C 10µs 100µs 1ms 0.1s 10s TJ(Max)=150°C TA=25°C 10 0 0.001 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 20 DC 0.1 10 30 40 RDS(ON) limited 0.1 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com