AOSMD AO4914

AO4914
30V Dual N-Channel MOSFET with Schottky Diode
General Description
Product Summary
The AO4914 uses advanced trench technology to provide Q1(N-Channel)
excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V
make a compact and efficient switch and synchronous
ID= 8A (VGS=10V)
rectifier combination for use in DC-DC converters. A
R
DS(ON) <20.5mΩ
Schottky diode is co-packaged in parallel with the
R
DS(ON) <28mΩ
synchronous MOSFET to boost efficiency further.
Q2(N-Channel)
30V
8A (VGS=10V)
RDS(ON) <20.5mΩ (VGS=10V)
RDS(ON) <28mΩ (VGS=4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
ESD Protected
100% UIS Tested
100% Rg Tested
SCHOTTKY
VDS = 30V, IF = 3A, VF<[email protected]
SOIC-8
Top View
Bottom View
D2
D1
Top View
S1/A
G1
S2
G2
K
D1/K
D1/K
D2
G2
G1
A
D2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
TA=70°C
C
ID
Max Q2
30
Units
V
±20
±20
V
8
8
6.5
6.5
40
A
IDM
40
Avalanche Current C
IAS, IAR
19
19
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
18
18
mJ
Pulsed Drain Current
Power Dissipation B
TA=70°C
PD
2
2
1.3
1.3
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Parameter
Reverse Voltage
Symbol
VDS
Max Schottky
30
Units
V
Continuous Forward
Current
TA=25°C
TA=70°C
Pulsed Diode Forward Current C
TA=25°C
Power Dissipation
B
TA=70°C
Junction and Storage Temperature Range
Rev 11: Mar. 2011
IF
IFM
PD
TJ, TSTG
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3
2.2
A
20
2
1.28
-55 to 150
W
°C
Page 1 of 9
AO4914
Thermal Characteristics - MOSFET
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Typ
Max
48
62.5
Units
°C/W
74
32
90
40
°C/W
°C/W
Typ
Max
Units
48
62.5
°C/W
74
32
90
40
°C/W
°C/W
Thermal Characteristics - Schottky
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 11: Mar. 2011
www.aosmd.com
Page 2 of 9
AO4914
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Min
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
ID=250uA, VGS=0V
V
0.05
VR=30V, TJ=125°C
10
VR=30V, TJ=150°C
20
IGSS
Gate-Body leakage current
VDS=0V,VGS=±16V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.2
VGS=10V, VDS=5V
40
VGS=10V, ID=8A
1.8
29
20.5
28
VDS=5V, ID=8A
30
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.45
IS
Maximum Body-Diode + Schottky Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qg(4.5V) Total Gate Charge
Gate Source Charge
Qgd
mΩ
mΩ
S
0.5
V
3
A
575
730
865
pF
VGS=0V, VDS=15V, f=1MHz
115
165
215
pF
50
82
120
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
12
15
18
nC
6
7.5
9
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
V
20.5
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Ciss
µA
17
gFS
VGS=4.5V, ID=4A
10
2.4
23.5
Static Drain-Source On-Resistance
TJ=125°C
mA
A
RDS(ON)
Output Capacitance
Units
30
Zero Gate Voltage Drain Current
by Schottky leakage)
Coss
Max
VR=30V
IDSS
ID(ON)
(Set
Typ
VGS=10V, VDS=15V, ID=8A
2.5
nC
Gate Drain Charge
3
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
3.5
ns
19
ns
3.5
ns
8
ns
nC
8
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 11: Mar. 2011
www.aosmd.com
Page 3 of 9
AO4914
Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
VDS=5V
4V
3.5V
5V
25
25
20
3V
ID(A)
ID (A)
20
15
15
10
10
5
5
125°C
25°C
VGS=2.5V
0
0
0
1
2
3
4
5
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
Normalized On-Resistance
30
25
RDS(ON) (mΩ
Ω)
1.5
VGS=4.5V
20
15
VGS=10V
10
VGS=10V
ID=8A
1.4
17
5
VGS=4.5V 2
ID=4A
10
1.2
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
50
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+01
ID=8A
125°C
1.0E+00
40
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ
Ω)
40
30
25°C
1.0E-02
1.0E-03
FET+Schottky
25°C
20
1.0E-04
10
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 11: Mar. 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 4 of 9
AO4914
Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=15V
ID=8A
1200
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
900
600
Coss
2
300
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
15
100.0
Crss
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
TA=25°C
10µs
100µs
1ms
1.0
10ms
0.1
TJ(Max)=150°C
TA=25°C
100
Power (W)
RDS(ON)
limited
10.0
ID (Amps)
30
10
10s
DC
1
0.0
0.01
0.1
1
VDS (Volts)
10
0.00001
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
Rev 11: Mar. 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 5 of 9
AO4914
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
ID(ON)
Min
Conditions
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
5
1.2
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
10
µA
1.8
2.4
V
17
20.5
23.5
29
20.5
28
40
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Units
1
TJ=125°C
Static Drain-Source On-Resistance
Max
30
TJ=55°C
RDS(ON)
Coss
Typ
A
30
0.75
mΩ
mΩ
S
1
V
2.5
A
600
740
888
pF
77
110
145
pF
50
82
115
pF
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
2.5
nC
3
nC
5
ns
3.5
ns
19
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 11: Mar. 2011
www.aosmd.com
Page 6 of 9
AO4914
Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
VDS=5V
4V
25
25
3.5V
5V
20
ID(A)
ID (A)
20
3V
15
15
10
10
VGS=2.5V
5
25°C
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ
Ω)
125°C
5
VGS=4.5V
20
15
VGS=10V
10
VGS=10V
ID=8A
1.4
17
5
VGS=4.5V
2
ID=4A
10
1.2
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
40
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=8A
1.0E+01
35
40
1.0E+00
125°C
25
-IS (A)
RDS(ON) (mΩ
Ω)
30
1.0E-01
125°C
1.0E-02
20
1.0E-03
15
25°C
25°C
1.0E-04
10
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 11: Mar. 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AO4914
Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=8A
1000
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
800
600
400
Coss
2
200
0
0
Crss
0
3
6Q (nC) 9
12
g
Figure 7: Gate-Charge Characteristics
0
15
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TA=25°C
10µs
RDS(ON)
100µs
1ms
10ms
1.0
0.1
DC
TJ(Max)=150°C
TA=25°C
100
Power (W)
10.0
-ID (Amps)
30
10
10s
0.0
1
0.01
0.1
1
-VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
0.01
PD
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 11: Mar. 2011
www.aosmd.com
Page 8 of 9
AO4914
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 11: Mar. 2011
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 9 of 9