AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO5803E and AO5803EL are electrically identical. VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V) -RoHS compliant -AO5803EL is Halogen Free ESD PROTECTED SC-89-6 D1 S1 D2 G1 D2 G1 G2 D1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A, F TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C Units V ±8 V ID -0.4 IDM -3 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 0.24 TJ, TSTG t ≤ 10s Steady-State Steady-State A 0.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum -20 -0.6 Pulsed Drain Current B A S2 RθJA RθJL Typ 275 360 300 °C Max 330 450 350 Units °C/W °C/W °C/W www.aosmd.com AO5803E Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 IGSS Gate-Body leakage current VDS=0V, VGS=±4.5V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -3 TJ=125°C ±1 µA -0.5 -0.9 V 0.62 0.8 0.87 1.1 A 1 Ω 0.96 1.25 Ω -1 V -0.5 A 100 pF VDS=-5V, ID=-0.6A Diode Forward Voltage IS=-0.1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 0.9 S -0.81 72 VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS tD(on) Turn-On DelayTime VGS=-4.5V, VDS=-10V, RL=16.7Ω, RGEN=3Ω 17 pF 9 pF 60.5 ns 150 ns 612 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-0.6A, dI/dt=100A/µs, VGS=-9V 27 Qrr Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs, VGS=-9V 8.3 Body Diode Reverse Recovery Time Ω 0.79 Forward Transconductance Reverse Transfer Capacitance µA VGS=-2.5V, ID=-0.5A VSD Output Capacitance -5 VGS=-1.8V, ID=-0.4A gFS Crss V TJ=55°C VGS=-4.5V, ID=-0.6A Coss Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=-20V, VGS=0V IDSS RDS(ON) Typ 436 ns 35 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 4: July 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5803E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 5 -6V -40°C VDS=-5V -4.5V 4 25°C -4V 2 -3.5V 3 -ID(A) -ID (A) -10V -3V 2 125°C 1 -2.5V 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 1 1.3 Normalized On-Resistance VGS=-1.8V 1.1 RDS(ON) (Ω ) 3 4 5 1.60E+00 1.2 1 VGS=-2.5V 0.9 0.8 0.7 VGS=-4.5V 0.6 0.5 VGS=-1.8V ID=-0.4A 1.40E+00 VGS=-4.5V ID=-0.6A 1.20E+00 VGS=-2.5V ID=-0.5A 1.00E+00 8.00E-01 6.00E-01 0 0.5 1 1.5 2 2.5 3 -50 -25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+00 ID=-0.6A 1.1 1.0E-01 125°C 1 1.0E-02 125°C 0.9 -IS (A) RDS(ON) (Ω ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 0.8 25°C 1.0E-03 -40°C 1.0E-04 0.7 25°C 1.0E-05 0.6 1.0E-06 0.5 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO5803E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 5 VDS=-10V ID=-0.6A Ciss 80 Capacitance (pF) -VGS (Volts) 4 3 2 1 60 40 Coss Crss 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 1ms 1.00 20 100µs 10 10ms 0.1s 1s 10s TJ(Max)=150°C TA=25°C 12 Power (W) -ID (Amps) 15 14 TJ(Max)=150°C, T A=25°C RDS(ON) limited 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10.00 0.10 5 DC 8 6 4 0.01 2 0 0.0001 0.00 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=330°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5803E Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs L -Isd + Vdd Ig Alpha & Omega Semiconductor, Ltd. t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com