AO6408 20V N-Channel MOSFET General Description Features The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. VDS (V) = 20V ID = 8.8A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 32mΩ (VGS = 1.8V) ESD Rating: 2000V HBM ESD Protected 100% UIS Tested 100% Rg Tested D TSOP-6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A VGS TA=25°C TA=70°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead C Rev4: September 2010 ±12 V ID 7 IDM 40 W 1.28 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 8.8 Pulsed Drain Current B Power Dissipation Maximum 20 RθJA RθJL www.aosmd.com Typ 47.5 74 37 °C Max 62.5 110 40 Units °C/W °C/W °C/W Page 1 of 4 AO6408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 10 IGSS Gate-Source leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 TJ=55°C Gate Threshold Voltage VDS=VGS ID=250µA 0.5 On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=8.8A VGS=4.5V, ID=8A 16 20 mΩ VGS=2.5V, ID=6A 20.5 25 mΩ VGS=1.8V, ID=4A 25.6 32 mΩ VDS=5V, ID=8.8A Diode Forward Voltage IS=1A IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time S 1 V 3 A 2200 pF 232 pF 200 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8.8A VGS=10V, VDS=10V, RL=1.1Ω, RGEN=3Ω pF 1.6 2.2 Ω 17.9 22 nC 1.5 nC 4.7 nC 3.3 ns 5.9 ns 44 ns 7.7 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8.8A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=100A/µs 9.8 Body Diode Reverse Recovery Time mΩ 33 0.72 1810 VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs V A 18 Forward Transconductance Gate resistance 1 23 gFS Reverse Transfer Capacitance 0.75 14.4 VSD Rg V 18.5 TJ=125°C Crss µA ±10 VGS(th) Output Capacitance µA 25 ID(ON) Coss Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ 27 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev4: September 2010 www.aosmd.com Page 2 of 4 AO6408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 20 4.5V 2.5V 2V 12 ID(A) ID (A) VDS=5V 16 30 20 125°C 8 10 4 VGS=1.5V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 0 5 40 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 1.6 VGS=2.5V,6A Normalized On-Resistance VGS=1.8V 30 RDS(ON) (mΩ Ω) 25°C VGS=4.5V 20 VGS=1.8V, 4A 1.2 VGS=10V 10 VGS=4.5V, 8A 1.4 VGS=2.5V 0 VGS=10V, 8.8A 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 1.0E+00 ID=6A 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ Ω) 30 20 1.0E-02 25°C 25°C 10 1.0E-03 1.0E-04 0 0 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev4: September 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 4 AO6408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 5 Capacitance (pF) VGS (Volts) 2400 VDS=10V ID=8.8A 4 3 2 1 2000 Ciss 1600 1200 Coss 800 Crss 400 0 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 100.0 40 10µs 100µs Power (W) 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C 20 10 10s 0 DC 0.1 0.001 0.1 TJ(Max)=150°C TA=25°C 30 1ms ID (Amps) 10.0 RDS(ON) limited 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev4: September 2010 www.aosmd.com Page 4 of 4