AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. N-Channel VDS= 30V P-Channel -30V ID= 3.4A (VGS=10V) -2.3A (VGS=-10V) RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115mΩ (VGS=-10V) < 70mΩ (VGS=4.5V) < 150mΩ (VGS=-4.5V) < 90mΩ (VGS=2.5V) < 200mΩ (VGS=-2.5V) TSOP6 Top View D1 Bottom View D2 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current VGS TA=25°C ID TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 6: Dec. 2012 Steady-State Steady-State Max p-channel -30 Units V ±12 ±12 V 3.4 -2.3 2.7 -1.8 20 -15 1.15 1.15 0.73 0.73 TJ, TSTG Symbol t ≤ 10s RθJA RθJL www.aosmd.com S2 p-channel -55 to 150 Typ 78 106 64 A W °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 9 AO6601 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max Units 30 V VDS=30V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 ±100 nA 1 1.5 V 46 60 73 88 VGS=4.5V, ID=3A 50 70 mΩ 90 mΩ 1 V 1.5 A VGS=10V, ID=3.4A TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=2A 62 gFS Forward Transconductance VDS=5V, ID=3.4A 14 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 0.75 mΩ S 185 235 285 pF 25 35 45 pF 10 18 25 pF 0.9 1.8 2.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 12 nC Qg(4.5V) Total Gate Charge 4.7 6 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.4A 0.95 nC nC Qgd Gate Drain Charge 1.6 tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time 1.5 ns tD(off) Turn-Off DelayTime 17.5 ns tf trr Turn-Off Fall Time 2.5 ns Qrr VGS=10V, VDS=15V, RL=4.4Ω, RGEN=3Ω IF=3.4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 8.5 12 2.55 4 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6: Dec. 2012 www.aosmd.com Page 2 of 9 AO6601 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 10V VDS=5V 2.5V 3V 12 12 4.5V 9 ID(A) ID (A) 9 6 6 VGS=2V 125°C 3 3 0 0 0 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 80 VGS=2.5V 70 RDS(ON) (mΩ Ω) 25°C 60 VGS=4.5V 50 40 VGS=10V 30 1.8 VGS=4.5V ID=3A 1.6 17 1.4 VGS=2.5V 5 ID=2A 1.2 VGS=10V ID=3.4A 1 2 10 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 140 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=3.4A 1.0E+01 120 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 100 80 1.0E-01 125°C 1.0E-02 60 25°C 25°C 1.0E-03 40 1.0E-04 20 1.0E-05 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 6: Dec. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO6601 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=15V ID=3.4A 400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 300 200 Coss 2 100 0 0 Crss 0 3 6 9 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C RDS(ON) limited 10µs 100µs 1.0 10ms 1ms TJ(Max)=150°C TA=25°C 0.1 DC 100 Power (W) ID (Amps) 10.0 10 10s 1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=150°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 Rev 6: Dec. 2012 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO6601 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 6: Dec. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO6601 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-2.3A gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current -0.6 Output Capacitance Reverse Transfer Capacitance Rg Gate resistance V µA ±100 nA -1 -1.4 V 88 115 143 200 103 150 mΩ 139 200 mΩ -15 VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-2.3A IS=-1A,VGS=0V DYNAMIC PARAMETERS Ciss Input Capacitance Crss Units -5 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C RDS(ON) Coss Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A mΩ 8 -0.78 S -1 V -1.5 A 205 260 315 pF 25 37 50 pF 10 20 30 pF 4 8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.5 5.9 7 nC Qg(4.5V) Total Gate Charge 2 2.8 4 nC VGS=10V, VDS=-15V, ID=-2.3A Qgs Gate Source Charge 0.7 nC Qgd tD(on) Gate Drain Charge 1 nC Turn-On DelayTime 6 tr Turn-On Rise Time ns 3.5 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 20 ns 5 IF=-2.3A, dI/dt=100A/µs ns 11.5 15 Qrr Body Diode Reverse Recovery Charge IF=-2.3A, dI/dt=100A/µs 4.5 6 Body Diode Reverse Recovery Time VGS=10V, VDS=-15V, RL=6Ω, RGEN=3Ω ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6: Dec. 2012 www.aosmd.com Page 6 of 9 AO6601 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 -10V VDS=-5V -4.5V -3V 12 8 6 -2.5V -ID(A) -ID (A) 9 4 6 125°C 25°C VGS=-2V 3 2 0 0 0 1 2 3 4 0 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 210 2 Normalized On-Resistance VGS=-2.5V 190 170 RDS(ON) (mΩ Ω) 0.5 150 VGS=-4.5V 130 110 90 VGS=-10V 70 50 VGS=-10V ID=-2.3A 1.8 1.6 17 5 VGS=-4.5V ID=-2A 2 10 1.4 1.2 VGS=-2.5V ID=-1A 1 0.8 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 250 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=-2.3A 1.0E+01 40 1.0E+00 125°C 125°C -IS (A) RDS(ON) (mΩ Ω) 200 150 1.0E-01 25°C 1.0E-02 25°C 1.0E-03 100 1.0E-04 50 1.0E-05 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 6: Dec. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO6601 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=-15V ID=-2.3A 400 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 300 200 Coss 2 100 0 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 6 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C RDS(ON) limited 10µs 100µs 1.0 1ms 10ms 0.1 100 Power (W) -ID (Amps) 10.0 10 DC TJ(Max)=150°C TA=25°C 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 0.01 PD Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 6: Dec. 2012 www.aosmd.com Page 8 of 9 AO6601 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 6: Dec. 2012 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9