AO7415 20V P-Channel MOSFET General Description Product Summary The AO7415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. VDS -20V ID (at VGS=-10V) -2A RDS(ON) (at VGS= -10V) < 100mΩ RDS(ON) (at VGS= -4.5V) < 125mΩ RDS(ON) (at VGS= -2.5V) < 170mΩ Typical ESD protection HBM Class 2 D SC-70-6 (SOT-323) Top View 1 6 2 5 3 4 D D G D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: Nov 2011 Steady-State Steady-State A -13 W 0.4 TJ, TSTG Symbol t ≤ 10s V 0.63 PD TA=70°C ±12 -1.6 IDM TA=25°C Units V -2 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com -55 to 150 Typ 160 180 130 °C Max 200 220 160 Units °C/W °C/W °C/W Page 1 of 5 AO7415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µΑ -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -13 VGS=-10V, ID=-2A Static Drain-Source On-Resistance TJ=125°C Maximum Body-Diode Continuous Current VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr A 115 mΩ mΩ IS Gate Source Charge 100 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance Qgs 80 170 IS=-1A,VGS=0V Gate resistance V 125 Diode Forward Voltage Rg µA -1.2 98 VSD Output Capacitance ±10 -0.85 130 VDS=-5V, ID=-2A Reverse Transfer Capacitance µA VGS=-2.5V, ID=-1.0A Forward Transconductance Coss Units VGS=-4.5V, ID=-1.3A gFS Crss Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-2A 5 -0.76 S -1 V -1 A 250 325 400 pF 40 63 85 pF 22 37 52 pF 11.2 17 Ω 3.2 4.5 nC 0.6 nC 0.9 nC 11 ns VGS=-10V, VDS=-10V, RL=5Ω, RGEN=3Ω 5.5 ns 22 ns 8 ns IF=-2A, dI/dt=100A/µs 6.1 Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 1.4 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Nov 2011 www.aosmd.com Page 2 of 5 AO7415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 10 -10V -5V VDS=-5V -9V 20 -4V -8V -3.5V -7V 15 6 -6V -ID(A) -ID (A) 8 -3V 10 4 -2.5V 5 2 -2V 125°C 25°C VGS=-1.5V 0 0 0 1 2 3 4 5 0 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 180 2 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4 Normalized On-Resistance 1.6 160 RDS(ON) (mΩ Ω) 1 VGS=-2.5V 140 VGS=-4.5V 120 100 VGS=-10V 80 ID=-1A, VGS=-2.5V 1.4 ID=-1.3A, VGS=-4.5V 1.2 ID=-2A, VGS=-10V 1.0 0.8 60 0 0 1 2 3 4 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 340 1.0E+01 ID=-2A 300 1.0E+00 1.0E-01 220 180 -IS (A) RDS(ON) (mΩ Ω) 260 125°C 125°C 25°C 1.0E-02 1.0E-03 140 1.0E-04 100 25°C 60 1.0E-05 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: Nov 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO7415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-10V ID=-2A 450 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 300 150 Coss 1 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 TJ(Max)=150°C TA=25°C 10µs 10.0 100 RDS(ON) limited 100µs Power (W) -ID (Amps) 20 1ms 1.0 10ms 100ms 10s DC 0.1 1 TJ(Max)=150°C TA=25°C 0.0 0.01 10 0.1 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 100 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=220°C/W 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Nov 2011 www.aosmd.com Page 4 of 5 AO7415 AO7413 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Rev 3: Nov 2011 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 5 of 5