AOSMD AOB260L

AOT260L/AOB260L
60V N-Channel MOSFET
General Description
Product Summary
The AOT(B)260L uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =6V)
100% UIS Tested
100% Rg Tested
TO220
Top View
60V
140A
< 2.5mΩ
< 2.9mΩ
Bottom View
Top View
TO-263
D2PAK
Bottom View
D
D
D
D
D
D
G
AOT260L
S
S
D
G
G
S
G
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 1 : Jul 2011
Steady-State
Steady-State
A
IAS, IAR
128
A
EAS, EAR
819
mJ
330
W
165
1.9
RθJA
RθJC
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W
1.2
TJ, TSTG
Symbol
t ≤ 10s
A
16
PDSM
TA=70°C
V
20
PD
TC=100°C
±20
500
IDSM
TA=70°C
Units
V
110
IDM
TA=25°C
Continuous Drain
Current
Maximum
60
140
ID
TC=100°C
S
S
AOB260L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current G
G
-55 to 175
Typ
12
54
0.35
°C
Max
15
65
0.45
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT260L/AOB260L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
2.2
VGS=10V, VDS=5V
500
TJ=55°C
100
nA
2.7
3.2
V
2
2.5
3.1
3.9
VGS=6V, ID=20A
TO220
2.2
2.9
mΩ
VGS=10V, ID=20A
TO263
1.7
2.2
mΩ
1.9
68
2.5
mΩ
S
0.65
1
V
140
A
TO220
gFS
Forward Transconductance
VGS=6V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
TJ=125°C
A
G
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Units
V
1
Zero Gate Voltage Drain Current
RDS(ON)
Max
60
VDS=60V, VGS=0V
IDSS
ID(ON)
Typ
mΩ
9400 11800 14200
pF
VGS=0V, VDS=30V, f=1MHz
1090
1360
1770
pF
32
40
68
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1
1.5
Ω
120
150
180
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
VGS=10V, VDS=30V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
28
40
52
nC
9
15
25
nC
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
30
ns
27
ns
74
ns
12
22
140
32
200
ns
42
260
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Jul 2011
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Page 2 of 6
AOT260L/AOB260L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
6V
80
80
4V
60
ID(A)
ID (A)
60
40
40
20
20
25°C
125°C
Vgs=3.5V
0
0
0
1
2
3
4
2
5
6
4
VGS=6V
2
VGS=10V
0
3.5
4
4.5
5
2
VGS=10V
ID=20A
1.8
17
5
2
10
1.6
VGS=6V
ID=20A
1.4
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=20A
1.0E+01
125°C
4
40
IS (A)
1.0E+00
RDS(ON) (mΩ )
3
2.2
Normalized On-Resistance
RDS(ON) (mΩ )
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
2
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
1
25°C
1.0E-04
0.0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : Jul 2011
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT260L/AOB260L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15000
12000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=30V
ID=20A
8
6
4
2
9000
6000
0
Crss
0
0
40
80
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
160
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
1000.0
10µs
10µs
RDS(ON)
limited
10.0
1ms
10ms
DC
900
100µs
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
800
Power (W)
100.0
ID (Amps)
Coss
3000
700
17
5
2
10
600
500
400
300
0.0
200
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.45°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : Jul 2011
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Page 4 of 6
AOT260L/AOB260L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
300
200
100
TA=125°C
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
150
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
1000
TA=25°C
Power (W)
120
Current rating ID(A)
175
90
60
100
17
5
2
10
10
30
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
1
0.001
0
10
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.1
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : Jul 2011
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Page 5 of 6
AOT260L/AOB260L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1 : Jul 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6