AOSMD AOD3N40

AOD3N40
400V,2.6A N-Channel MOSFET
General Description
Product Summary
The AOD3N40 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular ACDC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
[email protected]
ID (at VGS=10V)
2.6A
RDS(ON) (at VGS=10V)
< 3.1Ω
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
D
Bottom View
D
D
G
G
S
S
S
G
AOD3N40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentB
VGS
TC=25°C
TC=100°C
Pulsed Drain Current C
Maximum
400
Units
V
±30
V
2.6
ID
1.6
A
IDM
5.6
IAR
1.5
A
EAR
34
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
B
o
Power Dissipation
Derate above 25 C
EAS
dv/dt
68
5
50
mJ
V/ns
W
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
0.4
-50 to 150
W/ oC
°C
300
°C
Avalanche Current C
Repetitive avalanche energy
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev0: Oct 2011
D,F
PD
TL
Symbol
RθJA
RθCS
RθJC
Typical
46
Maximum
55
Units
°C/W
2.1
0.5
2.5
°C/W
°C/W
Page 1 of 6
AOD3N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
400
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
500
V
ID=250µA, VGS=0V
0.4
V/ oC
VDS=400V, VGS=0V
1
VDS=320V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
±100
3.4
µA
4
4.5
nΑ
V
3.1
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
2.5
gFS
Forward Transconductance
VDS=40V, ID=1A
1.7
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.8
IS
Maximum Body-Diode Continuous Current
2.6
A
ISM
Maximum Body-Diode Pulsed Current
5.6
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=320V, ID=2.6A
S
145
186
225
pF
15
26
37
pF
1.2
2.1
4.1
pF
2.2
4.4
6.6
Ω
3.3
4.2
5.1
nC
1.2
1.7
2.1
nC
0.5
1.0
1.5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=2.6A,dI/dt=100A/µs,VDS=100V
110
140
170
Qrr
Body Diode Reverse Recovery Charge IF=2.6A,dI/dt=100A/µs,VDS=100V
0.5
0.64
0.8
Body Diode Reverse Recovery Time
VGS=10V, VDS=200V, ID=2.6A,
RG=25Ω
14
ns
10
ns
18
ns
8
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.5A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2011
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Page 2 of 6
AOD3N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10
-55°C
VDS=40V
10V
4
7V
ID(A)
ID (A)
3
6V
2
125°C
1
25°C
1
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
7
6
VGS=10V
5
RDS(ON) (Ω
Ω)
4
4
3
2
1
2.5
VGS=10V
ID=1A
2
1.5
1
0.5
0
0
1
2
3
-100
4
1.2
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
1.0E+00
40
1.1
125°C
1.0E-01
1
25°C
IS (A)
BVDSS (Normalized)
ID=30A
125°
1.0E-02
0.9
1.0E-03
25°
0.8
1.0E-04
-100
Rev0: Oct 2011
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AOD3N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
15
Capacitance (pF)
VGS (Volts)
Ciss
VDS=320V
ID=2.6A
12
9
6
100
Coss
10
Crss
3
1
0
0
2
4
0.1
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
800
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
0.1
0.1s
TJ(Max)=150°C
TC=25°C
600
Power (W)
ID (Amps)
1
400
200
TJ(Max)=150°C
TC=25°C
0.01
0
1
10
100
1000
0.00001 0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Oct 2011
www.aosmd.com
Page 4 of 6
AOD3N40
60
3.0
50
2.5
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
2.0
1.5
1.0
0.5
0
0.0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
TA=25°C
Power (W)
300
200
100
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev0: Oct 2011
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Page 5 of 6
AOD3N40
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Oct 2011
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6