AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. -RoHS Compliant -Halogen Free* VDS (V) = 30V ID = 62A (VGS = 10V) RDS(ON) < 9.5mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B TC=100°C Avalanche Current C Power Dissipation B C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Case C V ID 44 120 IAR 30 A 135 mJ EAR 2.5 W 1.6 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 31 TJ, TSTG t ≤ 10s Steady-State Steady-State A 62.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ±20 IDM PD TC=100°C TA=25°C A Units V 62 Pulsed Drain Current Repetitive avalanche energy L=0.3mH TC=25°C Maximum 30 RθJA RθJC Typ 15 41 2 °C Max 20 50 2.4 Units °C/W °C/W °C/W AOD496 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 120 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V 0.1 µA 1.9 2.5 V 7.7 9.5 A 11.0 13 VGS=0V, VDS=0V, f=1MHz mΩ 16.0 mΩ 1.0 V 46 A 40 0.73 1000 VGS=0V, VDS=15V, f=1MHz uA 5 VGS(th) gFS Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IGSS RDS(ON) Typ S 1200 pF 340 pF 100 pF Ω 1.3 2.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 23 Qg(4.5V) Total Gate Charge 8.5 nC 3.1 nC 4.8 nC 5.6 ns 5.5 ns 18.5 ns VGS=10V, VDS=15V, ID=20A nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 5 ns IF=20A, dI/dt=100A/µs 29 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 24 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V VDS=5V 25 7V 90 20 ID(A) ID (A) 4.5V 60 4V 15 125° 10 30 25°C 5 VGS=3.5V 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 1.6 Normalized On-Resistance VGS=4.5V 13 RDS(ON) (mΩ ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 15 11 9 VGS=10V 7 5 VGS=10V 1.4 ID=20A 1.2 VGS=4.5 V VGS=4.5V 1 0.8 VGS=10V 0.6 0 5 10 15 20 25 30 -50 -20 10 40 70 100 130 160 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 1.0E+01 1.0E+00 25 ID=20A 125°C 1.0E-01 20 IS (A) RDS(ON) (mΩ ) 2 25°C 1.0E-02 125°C 15 1.0E-03 10 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD496 10 1500 8 1200 Capacitance (pF) VGS (Volts) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VDS=15V ID=20A 6 4 2 Ciss 900 600 Coss 300 0 Crss 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10µs 100µ 1m 1.0 DC 10ms 0.1 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 120 Power (W) RDS(ON) limited 10.0 TJ(Max)=175°C TC=25°C 100 80 60 40 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 20 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 30 140 100.0 ID (Amps) 5 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=2.4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 TA=25°C 60 Power Dissipation (W) ID(A), Peak Avalanche Current 200 160 120 80 40 50 40 30 20 10 0 0 0.000001 0.00001 0.0001 0.001 0 0.01 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability current derating 140 80 120 TJ(Max)=150°C TA=25°C 100 60 Power (W) Current rating ID(A) 25 40 80 60 40 20 20 0 0.001 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 PD Ton T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD490 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com