AOD498 100V N-Channel MOSFET General Description Product Summary The AOD498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 100V 11A RDS(ON) (at VGS=10V) < 140mΩ RDS(ON) (at VGS=4.5V) < 152mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: August 2012 IAS 8 A EAS 3 mJ 45 Steady-State Steady-State W 23 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 2 PDSM TA=70°C A 2.5 PD TC=100°C V 20 IDSM TA=70°C ±20 8 IDM TA=25°C Continuous Drain Current Units V 11 ID TC=100°C Maximum 100 -55 to 175 Typ 17 50 2.7 www.aosmd.com °C Max 25 60 3.3 Units °C/W °C/W °C/W Page 1 of 6 AOD498 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C ±100 nA 1.7 2.3 V 116 140 227 274 VGS=4.5V, ID=3A 121 152 mΩ 15 1 V 11 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance A 0.76 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Units µA 5 VGS=10V, ID=4.5A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz S 415 pF 31.5 pF 13 VGS=0V, VDS=0V, f=1MHz pF Ω 1.8 2.7 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 14 nC Qg(4.5V) Total Gate Charge 5 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=4.5A VGS=10V, VDS=50V, RL=11Ω, RGEN=3Ω 0.9 mΩ 1.6 nC 1.9 nC 4.5 ns 3 ns 20 ns tf Turn-Off Fall Time 2.5 ns trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=500A/µs 23 Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs 100 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: August 2012 www.aosmd.com Page 2 of 6 AOD498 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 VDS=5V 10V 4.5V 15 15 ID(A) ID (A) 3.5V 10 10 3V 125°C 5 5 VGS=2.5V 25°C 0 0 0 1 2 3 4 1 5 140 3 4 5 Normalized On-Resistance 2.6 VGS=4.5V 130 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 120 110 VGS=10V 2.4 VGS=10V ID=4.5A 2.2 2 17 5 2 VGS=4.5V 10 1.8 1.6 1.4 1.2 ID=3A 1 0.8 100 0 0 2 4 6 8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 280 1.0E+02 ID=4.5A 260 1.0E+01 240 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 220 200 180 160 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 140 25°C 1.0E-04 120 1.0E-05 100 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: August 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD498 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=50V ID=4.5A 700 8 Capacitance (pF) VGS (Volts) 600 6 4 500 Ciss 400 300 Coss 200 2 100 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 10 20 30 40 50 60 70 80 VDS (Volts) Figure 8: Capacitance Characteristics 90 100 200 100.0 10µs10µs 1.0 Power (W) 100µs RDS(ON) limited TJ(Max)=175°C TC=25°C 160 10.0 ID (Amps) Crss 1ms 10ms DC 17 5 2 10 120 80 0.1 40 TJ(Max)=175°C TC=25°C 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 010 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=3.3°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: August 2012 www.aosmd.com Page 4 of 6 AOD498 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=100°C TA=25°C 10 TA=150°C TA=125°C 1 30 20 10 0 1 10 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 100 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 10000 12 TA=25°C 10 1000 8 Power (W) Current rating ID(A) 40 6 17 5 2 10 100 4 10 2 1 0 0.00001 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: August 2012 www.aosmd.com Page 5 of 6 AOD498 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: August 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6