AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. N-Channel P-Channel VDS= 60V -60V ID= 13A (VGS=10V) -13A (VGS=-10V) RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115mΩ (VGS=-10V) < 85mΩ (VGS=4.5V) < 150mΩ (VGS=-4.5V) 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested TO252-4L DPAK D1 Top View D2 Bottom View D1/D2 G1 D1/D2 S2 G2 S1 G2 N-channel G1 S1 S2 P-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Max N-channel 60 Max P-channel -60 Units V ±20 ±20 V 12 -12 9.5 -9.5 30 -30 ID TC=100°C C IDM TA=25°C IDSM TA=70°C 3.5 -3 3 -2.5 A A Avalanche Current C IAS, IAR 19 25 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 18 31 mJ Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Sep. 2011 42.5 21.5 t ≤ 10s Steady-State Steady-State t ≤ 10s Steady-State Steady-State W 2 2 1.3 1.3 TJ, TSTG -55 to 175 -55 to 175 °C Symbol Typ 19 50 4 Typ 19 50 2.5 Max 23 60 5.5 Max 23 60 3.5 Units °C/W °C/W °C/W Units °C/W °C/W °C/W PDSM TA=70°C Thermal Characteristics Parameter N-channel Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Parameter P-channel Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 27 13.5 RθJA RθJC Symbol RθJA RθJC www.aosmd.com W Page 1 of 11 AOD603A N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 60 V VDS=60V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C 5 VDS=0V, VGS= ±20V VGS=10V, ID=12A nA 2.4 3 V 47 60 90 110 85 mΩ 1 V 12 A A Static Drain-Source On-Resistance VGS=4.5V, ID=8A 67 gFS Forward Transconductance VDS=5V, ID=12A 22 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance µA ±100 RDS(ON) TJ=125°C Units 0.74 mΩ S 360 450 540 pF 40 61 80 pF 16 27 40 pF 0.6 1.35 2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.5 10 nC Qg(4.5V) Total Gate Charge 3.8 5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=12A 1.2 nC Qgd Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 4.2 ns tr Turn-On Rise Time 3.4 ns VGS=10V, VDS=30V, RL=2.5Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 30 16 ns 2 ns 35 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep. 2011 www.aosmd.com Page 2 of 11 AOD603A N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 25 VDS=5V 7V 16 6V 20 5V 10 4.5V ID(A) ID (A) 12 15 8 125°C 4V 4 5 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 1 100 2.6 90 2.4 Normalized On-Resistance RDS(ON) (mΩ ) 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 80 2 70 60 50 40 VGS=10V VGS=10V ID=12A 2.2 2 17 5 2 10 1.8 1.6 1.4 VGS=4.5V ID=8A 1.2 1 0.8 30 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 160 1.0E+01 ID=12A 140 1.0E+00 120 1.0E-01 125°C IS (A) RDS(ON) (mΩ ) 40 100 80 125°C 1.0E-02 25°C 1.0E-03 25°C 1.0E-04 60 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 11 AOD603A N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=30V ID=12A 700 8 Capacitance (pF) VGS (Volts) 600 6 4 Ciss 500 400 300 Coss 200 2 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 200 1000.0 10µs 100.0 TJ(Max)=175°C TC=25°C 160 RDS(ON) limited 100µs 1ms 10ms DC 1.0 0.1 Power (W) ID (Amps) 10µs 10.0 0.0 0.1 80 40 TJ(Max)=175°C TC=25°C 0.01 17 5 2 10 120 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep. 2011 www.aosmd.com Page 4 of 11 AOD603A N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C 25 TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 20 15 10 5 1 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 20 10000 15 1000 Power (W) Current rating ID(A) TA=25°C 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 0.001 0.1 10 1000 0 18 175 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Sep. 2011 www.aosmd.com Page 5 of 11 AOD603A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Sep. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 11 AOD603A P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -60 Max -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 TJ=55°C -5 VDS=0V, VGS= ±20V ±100 VGS=-10V, ID=-12A -2.1 -3 115 150 180 VGS=-4.5V, ID=-8A 114 150 VDS=-5V, ID=-12A 12 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V TJ=125°C Maximum Body-Diode Continuous Current -0.76 G DYNAMIC PARAMETERS Ciss Input Capacitance µA nA V A 91 RDS(ON) Units V VDS=-60V, VGS=0V IDSS IS Typ mΩ mΩ S -1 V -12 A pF 760 960 1160 60 86 120 pF 20 38 55 pF 3.5 7 10 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15.8 20 nC Qg(4.5V) Total Gate Charge 5 7.4 9 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-12A 3 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 9 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 25 ns tf Turn-Off Fall Time 11 ns trr Qrr VGS=-10V, VDS=-30V, RL=2.5Ω, RGEN=3Ω IF=-12A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 27.5 35 30 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep. 2011 www.aosmd.com Page 7 of 11 AOD603A P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 -10V VDS=-5V -5V 25 -7V -6V 12 -4.5V 9 -ID(A) -ID (A) 20 -4V 15 6 10 125°C -3.5V 25°C 3 5 VGS=-3V 0 0 0 1 2 3 4 0 5 1 2.2 210 2 Normalized On-Resistance 230 RDS(ON) (mΩ ) 190 170 VGS=-4.5V 130 110 90 VGS=-10V 70 0 5 10 15 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 150 2 VGS=-10V ID=-12A 1.8 17 5 2 10 VGS=-4.5V 1.6 1.4 1.2 ID=-8A 1 0.8 20 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 310 1.0E+01 ID=-12A 270 1.0E+00 230 1.0E-01 190 -IS (A) RDS(ON) (mΩ ) 40 125°C 150 125°C 1.0E-02 25°C 1.0E-03 110 1.0E-04 25°C 1.0E-05 70 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 8 of 11 AOD603A P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=-30V ID=-12A 1200 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 1000 800 600 Coss 400 2 200 0 4 8 12 Qg (nC) Figure 7: Gate-Charge Characteristics 16 0 10 20 30 40 50 -VDS (Volts) Figure 8: Capacitance Characteristics 60 200 1000.0 10µs 100.0 TJ(Max)=175°C TC=25°C 160 10µs 10.0 RDS(ON) limited 100µs 1.0 1ms 10ms DC 0.1 Power (W) -ID (Amps) Crss 0 0 0.0 0.1 80 40 TJ(Max)=175°C TC=25°C 0.01 17 5 2 10 120 1 10 -VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 T 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep. 2011 www.aosmd.com Page 9 of 11 AOD603A P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 1 40 30 20 10 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 20 10000 15 1000 Power (W) Current rating ID(A) TA=25°C 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 0.001 0.1 10 1000 0 18 175 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Sep. 2011 www.aosmd.com Page 10 of 11 AOD603A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: Sep. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 11 of 11