AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 18A RDS(ON) (at VGS=10V) < 0.39Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK18N65L Top View TO-247 D G S G D S AOK18N65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK18N65 650 Units V ±30 V 18 12 A Pulsed Drain Current C IDM Avalanche Current C IAR 6.3 A Repetitive avalanche energy C EAR 595 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range EAS dv/dt 1190 5 417 mJ V/ns W 3.3 -55 to 150 W/ oC °C 300 °C AOK18N65 40 0.5 0.3 Units °C/W °C/W °C/W Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Rev0: Dec 2011 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com 80 Page 1 of 5 AOK18N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 750 ID=250µA, VGS=0V 0.7 V V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 2.9 µA 3.5 4.5 nΑ V 0.39 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A 0.32 gFS Forward Transconductance VDS=40V, ID=9A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current* 18 A ISM Maximum Body-Diode Pulsed Current 80 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2270 3027 3785 pF VGS=0V, VDS=25V, f=1MHz 170 271 370 pF 12 22 32 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 44 56 68 nC 9 12.4 15 nC 9 19.6 30 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=520V, ID=18A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=18A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time S 0.69 VGS=10V, VDS=325V, ID=18A, RG=25Ω 54 ns 83 ns 149 ns 71 IF=18A,dI/dt=100A/µs,VDS=100V ns 520 655 790 8 10 12 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=6.3A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Dec 2011 www.aosmd.com Page 2 of 5 AOK18N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 -55°C VDS=40V 10V 30 6V ID(A) ID (A) 10 20 125°C 5.5V 1 10 VGS=5V 25°C 0 0.1 0 5 10 15 20 25 30 0 VDS (Volts) Fig 1: On-Region Characteristics 0.6 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 3 0.5 RDS(ON) (Ω Ω) 2 VGS=10V 0.4 0.3 VGS=10V ID=9A 2.5 2 1.5 1 0.5 0 0.2 0 10 20 30 -100 40 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev0: Dec 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOK18N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=520V ID=18A Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss Crss 100 3 0 10 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.1 20 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 15 10µs 10 ID (Amps) Current rating ID(A) 100 10 100µs 1ms 1 10ms DC 5 0.1 TJ(Max)=150°C TC=25°C 0 0.01 0 25 50 75 100 125 150 TCASE (°C) (°C) Figure 9: Current De-rating (Note B) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOK18N65 (Note F) 1000 Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOK18N65 (Note F) Rev0: Dec 2011 www.aosmd.com Page 4 of 5 AOK18N65 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: Dec 2011 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5