AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 46A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.5V) -RoHS Compliant -Halogen and Antimony Free Green Device* TM Ultra SO-8 UIS Tested Rg,Ciss,Coss,Crss Tested Top View D D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain B Current Units V ±12 V 46 TC=100°C Pulsed Drain Current ID 33 IDM 120 TA=25°C Continuous Drain Current H Maximum 30 A 10 IDSM TA=70°C A 8 C IAR 30 A Repetitive avalanche energy L=0.3mH C TC=25°C EAR 135 mJ Avalanche Current Power Dissipation B Power Dissipation A TC=100°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Case C 2 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.2 TJ, TSTG t ≤ 10s Steady-State Steady-State W 21 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A 43 PD RθJA RθJC Typ 24 53 2.4 °C Max 30 64 3.5 Units °C/W °C/W °C/W www.aosmd.com AOL1426 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 5 VGS=0V, VDS=0V, f=1MHz uA 0.1 µA 1.55 2.5 V 8.5 10.5 14.5 18 10.2 13.5 mΩ 1.0 V 46 A 1452 pF A 40 0.73 1210 VGS=0V, VDS=15V, f=1MHz Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ S 330 pF 85 pF 1.2 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 28 nC Qg(4.5V) Total Gate Charge 10 13 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 47 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 3.7 nC 2.7 nC 10 ns 6.3 ns 21 ns 2.8 ns 45 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev5: Dec 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 6V 90 20 60 ID(A) 4.5V ID (A) VDS=5V 25 10V VGS=3.5V 125° 15 25°C 10 30 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 13 Normalized On-Resistance 2 11 RDS(ON) (mΩ ) 2 VGS=4.5V 9 VGS=10V 7 5 VGS=10V 1.8 ID=20A 1.6 VGS=4.5 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 1.0E+01 125°C 1.0E+00 15 25°C IS (A) RDS(ON) (mΩ ) ID=20A 125°C 10 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 Capacitance (pF) VGS (Volts) 8 VDS=15V ID=20A 6 4 2 1500 Ciss 1000 500 Coss Crss 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 140 10µs 100µ RDS(ON) limited 10.0 1m 1.0 DC 10ms 0.1 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 120 Power (W) 100.0 ID (Amps) 5 TJ(Max)=175°C TC=25°C 100 80 60 40 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 20 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=3.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 20 40 30 20 10 0 0 0.00001 0.0001 0.001 0 0.01 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 140 100 40 Power (W) Current rating ID(A) 120 20 80 60 40 20 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=64°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1426 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com