AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) =25V ID = 44 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V) -RoHS Compliant -Halogen and Antimony Free Green Device* UIS Tested Rg,Ciss,Coss,Crss Tested D Ultra SO-8TM Top View D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain G Current C Avalanche Current Power Dissipation B Power Dissipation ID IDM A C TC=25°C V A 31 100 IDSM IAR 10 A 25 EAR 94 A mJ 30 PD TC=100°C TA=25°C Junction and Storage Temperature Range 2 °C -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.3 TJ, TSTG t ≤ 10s Steady-State Steady-State W 15 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B ±20 12 TA=70°C Repetitive avalanche energy L=0.3mH Units V 44 TC=100°C TA=25°C C Maximum 25 RθJA RθJC Typ 14.2 48 3.5 Max 20 60 5 Units °C/W °C/W °C/W www.aosmd.com AOL1432 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=250uA, VGS=0V VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=20A VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge nA 1.8 3 V 6.5 8.5 9.5 12 11.5 14 A 35 0.72 1430 VGS=0V, VDS=12.5V, f=1MHz VGS=10V, VDS=12.5V, ID=20A mΩ mΩ S 1 V 55 A 1716 pF 319 pF 215 VGS=0V, VDS=0V, f=1MHz µA 100 100 VGS=10V, ID=30A RDS(ON) 5 1 Units V TJ=55°C Gate-Body leakage current Max 25 VDS=20V, VGS=0V VGS(th) IS Typ pF 1.2 2 Ω 26.4 32 nC 13.5 nC 3.9 nC nC Qgs Gate Source Charge Qgd Gate Drain Charge 7.75 tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time 10 ns 22.7 ns 6.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=12.5V, RL=0.6Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 23.06 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 15.25 27.5 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev 3: Jul 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1432 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 5V 10V 4.5V 6V 80 VDS=5V 50 7V ID(A) 40 60 ID (A) VGS=4V 40 30 125°C 20 25°C 3.5V 20 10 3V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 1.8 VGS=4.5V 14 RDS(ON) (mΩ) Normalized On-Resistance 16 12 10 VGS=10V 8 6 4 2 1.6 VGS=10V, 20A 1.4 1.2 VGS=4.5V, 20A 1 0 0 10 0.8 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 30 ID=20A 1.0E+01 25 1.0E+00 IS (A) RDS(ON) (mΩ) 20 125°C 15 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1432 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 Ciss 1600 Capacitance (pF) 8 VGS (Volts) 1800 VDS=12.5V ID=20A 6 4 1400 1200 1000 800 Coss 600 400 2 200 Crss 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 30 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 200 1000.0 TJ(Max)=175°C, TC=25°C 160 100µs 1ms 10.0 RDS(ON) limited 10ms 120 80 DC 1.0 40 0.1 0.1 1 10 100 VDS (Volts) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance TJ(Max)=175°C TC=25°C 10µs Power (W) ID (Amps) 100.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1432 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 Power Dissipation (W) ID(A), Peak Avalanche Current 50 30 TA=25°C 20 10 30 20 10 0 0 0.00001 0.0001 0 0.001 25 50 50 40 40 Power (W) Current rating ID(A) 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 20 10 TA=25°C 30 20 10 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1432 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg I AR Vdd Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com