AOSMD AON1610

AOS Semiconductor
Product Reliability Report
AON1610,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AON1610. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AON1610 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
routine monitored for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product Description:
The AON1610 combines advanced trench MOSFET technology with a low resistance package to
provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Details refer to the datasheet.
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bonding
Mold Material
Moisture Level
AON1610
Standard sub-micron
20V N-Channel MOSFET
DFN1.6 x1.6A
Bare Cu
Ag Epoxy
Cu wire
Epoxy resin with silica filler
Up to Level 1
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III. Reliability Stress Test Summary and Results
Test Item
Test Condition
Time Point
Total
Sample
size*
Number
of
Failures
Reference
Standard
MSL
Precondition
168hr 85°C/85%RH +
3 cycle [email protected]°C
(MSL 1)
-
2079 pcs
0
JESD22-A113
HTGB
Temp = 150°C ,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
HTRB
Temp = 150°C ,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
HAST
130°C , 85%RH,
33.3 psi, Vds = 80% of
Vdsmax up to 42V
96 hours
693 pcs
0
JESD22-A110
Pressure Pot
121°C , 29.7psi,
RH=100%
96 hours
693 pcs
0
JESD22-A102
Temperature
Cycle
-65°C to 150°C ,
air to air,
250 / 500
cycles
693 pcs
0
JESD22-A104
*Note: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 3.61
MTTF = 31615 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
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Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 3.61
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MTTF = 10 / FIT = 31615 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from burn-in tests
H = Duration of burn-in testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
259
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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