AOSMD AON2801

AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON2801/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
AON2801 and AON2801L are electrically identical.
-RoHS Compliant
-Halogen Free*
VDS (V) = -20V
ID = -3A
(VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -4.5V)
RDS(ON) < 160mΩ (VGS = -2.5V)
RDS(ON) < 200mΩ (VGS = -1.8V)
DFN 2x2 Package
S1
G1
D2
G2
G1
D1
Top
G2
S2
S1
S2
Bottom
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
CurrentA
C
TA=25°C
A
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
±8
V
ID
-2.3
IDM
-15
W
0.95
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
t ≤ 10s
Steady-State
A
1.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
Maximum
-20
-3
TA=70°C
Pulsed Drain Current
Power Dissipation
D2
D1
RθJA
RθJA
Typ
35
65
120
175
°C
Max
45
85
155
235
Units
°C/W
°C/W
°C/W
°C/W
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AON2801
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
TJ=55°C
VGS=-4.5V, ID=-3A
VGS=-1.8V, ID=-1.5A
160
200
mΩ
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
6
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, RL=1.5Ω,
RGEN=3Ω
A
700
pF
pF
63
pF
9.5
Ω
6.5
nC
1.2
nC
1
nC
5
ns
40
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-3A, dI/dt=100A/µs
21
Qrr
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
9.1
Body Diode Reverse Recovery Time
V
-1
90
5
VGS=-4.5V, VDS=-10V, ID=-3A
mΩ
S
-0.76
540
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Gate Drain Charge
A
mΩ
Diode Forward Voltage
Gate Source Charge
V
160
VSD
Qgs
-1
128
IS
Qgd
nA
VGS=-2.5V, ID=-2.6A
VDS=-5V, ID=-3A
Gate resistance
±100
120
Forward Transconductance
Rg
-0.55
µA
170
gFS
Reverse Transfer Capacitance
-5
100
Static Drain-Source On-Resistance
Output Capacitance
Units
135
TJ=125°C
RDS(ON)
Coss
Max
V
VDS=-20V, VGS=0V
IDSS
Crss
Typ
28.5
ns
46
ns
28
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
-15value in any given application depends
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 7111 (Oct 15 2007).
Rev 2: Sep 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AON2801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
15
-3.0V
-4.5V
VDS=-5V
12
12
-2.5V
-ID(A)
-ID (A)
25°C
9
-2.0V
6
9
125°C
6
VGS=-1.5V
3
3
0
0
0
1
2
3
4
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
3
4
1.5
Normalized On-Resistance
280
240
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
VGS=-1.8V
200
VGS=-2.5V
160
120
VGS=-4.5V
80
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
ID=-2.6A
1.3
VGS=-4.5V
ID=-3A
1.1
0.9
0.7
0
2
4
6
8
10
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-15
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
1E+01
320
ID=-3A
280
1E+00
240
1E-01
-IS (A)
RDS(ON) (mΩ )
12
200
125°C
160
120
125°C
1E-02
25°C
1E-03
1E-04
25°C
80
1E-05
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON2801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
800
VDS=-10V
ID=-3A
700
3
2
Ciss
600
Capacitance (pF)
-VGS (Volts)
4
500
400
300
Crss
Coss
200
1
100
0
0
0
1
2
3
4
5
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.00
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
10.00
1000
100µ
1.00
Power (W)
-ID (Amps)
20
1ms
RDS(ON)
limited
0.10
10ms
0.1s
10s
DC
100
10
0.01
0.1
1
10
100
1
0.000001
-VDS (Volts)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=85°C/W
0.0001
0.01
1
100
10000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-15
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AON2801
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
Vds
t off
t on
td(on)
Vgs
-
D UT
Vgs
t d(off)
tr
90%
Vdd
VDC
tf
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
D UT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I R M
Vdd
VD C
-
-I F
-Vds
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