AON3611 30V Complementary MOSFET General Description Product Summary The AON3611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. N-channel P-channel VDS (V) = 30V VDS (V) = -30V ID = 5A ID = -6A (VGS = ±10V) RDS(ON) < 50mΩ RDS(ON) < 38mΩ (VGS = ±10V) RDS(ON) < 70mΩ RDS(ON) < 62mΩ (VGS = ±4.5V) D1 D2 DFN 3x3 Top View Top View Bottom View S2 G2 D2 S1 D1 G1 D1 D2 G1 G2 S2 N-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current TA=70°C Pulsed Drain Current C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics: N-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics: P-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Lead Rev 0: Jan. 2012 Units V ±20 ±20 V 5 -6 3.8 -4.7 20 -30 2.1 2.5 1.3 1.6 TJ, TSTG -55 to 150 -55 to 150 °C Symbol Typ 50 80 48 Max 60 98 58 Units °C/W °C/W °C/W Typ 40 70 38 Max 50 85 46 Units °C/W °C/W °C/W ID IDM TA=25°C B Max P-channel -30 VGS TA=25°C S1 P-channel PD RθJA RθJL Symbol RθJA RθJL www.aosmd.com A W Page 1 of 9 AON3611 N-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS, ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 ±100 nA 2 2.5 V 40 50 64 80 VGS=4.5V, ID=3A 53 70 mΩ 1 V 1.5 A VGS=10V, ID=5A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz S 170 pF 35 pF 23 VGS=0V, VDS=0V, f=1MHz pF Ω 3.5 5.3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 10 nC Qg(4.5V) Total Gate Charge 2 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=5A 1.7 mΩ 0.55 nC 1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 2.5 VGS=10V, VDS=15V, RL=3Ω, RGEN=3Ω 4.5 ns 1.5 ns 18.5 ns 15.5 ns 7.5 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jan. 2012 www.aosmd.com Page 2 of 9 AON3611 N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V VDS=5V 4V 8 4.5V 10 ID (A) 6 ID(A) 3.5V 4 125°C 5 25°C 2 VGS=3V 0 0 0 1 2 3 4 1 5 80 3 4 5 Normalized On-Resistance 2 VGS=4.5V 60 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 VGS=10V 20 1.8 VGS=10V ID=5A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=3A 1 0.8 0 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+01 ID=5A 2.1 1.0E+00 100 2.5 1.6 1.3 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 80 60 1.0E-02 125°C 1.0E-03 40 25°C 20 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jan. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AON3611 N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=15V ID=5A 250 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 200 150 100 2 Coss 50 0 Crss 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 100 TA=25°C ID (Amps) RDS(ON) limited 100µs 1 1ms 10ms 100ms 10s TJ(Max)=150°C TA=25°C 0.1 Power (W) 10µs 10 10 DC 0.01 1 0.01 0.1 1 VDS (Volts) 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 2.1 1.3 RθJA=98°C/W 2.5 1.6 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jan. 2012 www.aosmd.com Page 4 of 9 AON3611 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: Jan. 2012 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AON3611 P-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Max -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 Units V VDS=-30V, VGS=0V VGS(th) µA ±100 nA -1.9 -2.4 V 30 38 45 57 VGS=-4.5V, ID=-4A 46 62 mΩ 13 -1 V -2 A VGS=-10V, ID=-6A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-6A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance A -0.76 mΩ S 520 pF VGS=0V, VDS=-15V, f=1MHz 100 pF VGS=0V, VDS=0V, f=1MHz 7.5 11.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 20 nC Qg(4.5V) Total Gate Charge 4.6 10 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 65 VGS=-10V, VDS=-15V, ID=-6A pF 1.6 nC 2.2 nC 7.5 ns VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω 5.5 ns 19 ns 7 ns IF=-6A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 5.3 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jan. 2012 www.aosmd.com Page 6 of 9 AON3611 P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -8V 30 -5V VDS=-5V 25 25 -4.5V 20 -ID(A) -ID (A) 20 15 -4V 10 15 125°C 10 5 5 VGS=-3.5V 25°C 0 0 0 1 2 3 4 1 5 100 3 4 5 6 Normalized On-Resistance 1.8 80 VGS=-4.5V RDS(ON) (mΩ Ω) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 40 VGS=-10V 20 1.6 VGS=-10V ID=-6A 1.4 17 5 2 10 VGS=-4.5V 1.2 1 ID=-4A 0.8 0 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+02 ID=-6A 1.0E+01 2.1 100 2.5 1.6 1.3 1.0E+00 125°C -IS (A) RDS(ON) (mΩ Ω) 80 125°C 60 1.0E-01 1.0E-02 25°C 40 1.0E-03 20 1.0E-04 25°C 1.0E-05 0 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jan. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AON3611 P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-15V ID=-6A 700 8 Capacitance (pF) -VGS (Volts) 600 6 4 Ciss 500 400 300 Coss 200 2 100 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 100 100.0 TA=25°C 10µs RDS(ON) limited 100µs Power (W) -ID (Amps) 10.0 30 1ms 10ms 1.0 100ms TJ(Max)=150°C TA=25°C 0.1 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 2.1 1.3 RθJA=85°C/W 2.5 1.6 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jan. 2012 www.aosmd.com Page 8 of 9 AON3611 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge R e s is tiv e S w itc h in g T e s t C irc u it & W a v e fo rm s RL Vds t o ff to n td (o n ) Vgs - DUT Vgs t d (o ff) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds - Isd V gs Ig Rev 0: Jan. 2012 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 9 of 9